Magnetoresistive element and magnetic memory

A magnetoresistive element comprising:

• first and second stabilization layers;
• a nonmagnetic layer;
• a first spin-polarization layer provided between the first stabilization layer and the nonmagnetic layer, the first spin-polarization layer having magnetic anisotropy in a perpendicular direction;
• and
• a second spin-polarization layer provided between the second stabilization layer and the nonmagnetic layer, the second spin-polarization layer having magnetic anisotropy in a perpendicular direction,
• wherein the first stabilization layer has a lattice constant smaller than that of the first spin-polarization layer in an in-plane direction,
• the second stabilization layer has a lattice constant smaller than that of the second spin-polarization layer in an in-plane direction, and
• each of the first and second spin-polarization layers contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

A magnetic memory comprising a memory cell comprising a magnetoresistive element,

• the magnetoresistive element comprising:
• a stabilization layer;
• a nonmagnetic layer;
• a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction;
• and
• a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided,
• wherein the stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction, and
• the spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.