Semiconductor structures resulting from selective oxidation
AssigneeMicron Technology, Inc.
InventorsYongjun Jeff Hu, Allen McTeer, Naga Chandrasekaran
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Abstract
Methods for selectively oxidizing a semiconductor structure include generating a gas cluster ion beam comprising an oxidizing source gas, directing the gas cluster ion beam to a region of a substrate adjacent a conductive line and exposing the region to the gas cluster ion beam including an oxidizing matter. Utilizing the gas cluster ion beam enables selective oxidation of a targeted region at temperatures substantially lower than those of typical oxidation processes thus, reducing or eliminating oxidation of the conductive line. Semiconductor devices including transistors formed using such methods are also disclosed.
Claims19
A semiconductor device, comprising:
- a substrate;
- a gate oxide overlying the substrate;
- at least one transistor gate comprising at least one conductive material and having exposed sidewalls laterally adjacent a reoxidized region on the gate oxide.
A semiconductor structure, comprising:
- at least one conductive structure disposed over a semiconductor substrate and having at least one exposed vertical surface;
- and
- an oxide material disposed between the at least one conductive structure and the semiconductor substrate, a region of the oxide material laterally adjacent the exposed vertical surface having an average roughness of less than about 6 Å.
A semiconductor structure, comprising:
- an oxide material overlying a semiconductor substrate;
- at least one conductive structure disposed on the oxide material;
- and
- a reoxidized region laterally adjacent at least one exposed sidewall of the conductive structure.
Dependencies are inferred from the claim text.