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US 2010/0244154 A1Published application
Semiconductor device including misfet
AssigneeKabushiki Kaisha Toshiba
InventorNobuaki YASUTAKE
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate electrode, a source/drain layer, and a germanide layer. The gate insulating film is formed on the semiconductor substrate. The gate electrode is formed on the gate insulating film. The source/drain layer is formed on both sides of the gate electrode, contains silicon germanium, and has a germanium layer in a surface layer portion. The germanide layer is formed on the germanium layer of the source/drain layer.
Claims9
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on the semiconductor substrate;
- a gate electrode formed on the gate insulating film;
- a first sidewall insulating film formed on a side surface of the gate electrode;
- a source/drain layer formed on both sides of the gate electrode, the source/drain layer including a silicon germanium layer and an extension layer, the extension layer being formed on the semiconductor substrate below the first sidewall insulating film, the extension layer being arranged between the silicon germanium layer and a channel region below the gate insulating film;
- a germanium layer including a first portion and a second portion, the first portion being disposed between the first sidewall insulating film and the extension layer, a bottom surface of the first portion contacting a top surface of the extension layer, and a top surface of the first portion contacting a bottom surface of the first sidewall insulating film, and the second portion being disposed on the silicon germanium layer;
- and
- a germanide layer contacting the second portion of the germanium layer.
5 more elements
Dependencies are inferred from the claim text.