Semiconductor device and method of manufacturing the same

Abstract

Provided are a semiconductor device capable of reducing a difference in wiring resistance between paths from a gate pad to a gate electrode and capable of applying a gate voltage to the gate electrode more uniformly, and a method of manufacturing the semiconductor device. The semiconductor device according to an exemplary aspect of the present invention includes a gate pad supplied with a gate voltage applied to a gate electrode of each MOSFET cell disposed in an active region, a gate connection line connected to the gate pad, and a plurality of gate lead-out lines connected in parallel between the gate electrode and the gate connection line. Each of the plurality of gate lead-out lines has a resistance value that becomes smaller by every one or plural gate lead-out lines as the gate lead-out lines are located farther away from the gate pad.

Dependencies are inferred from the claim text.