Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length

A method of fabricating a semiconductor structure comprising a primary bipolar junction transistor (“BJT”), the method comprising:

• introducing (a) first semiconductor dopant of a first conductivity type into material of the semiconductor body intended to be primary base link and primary intrinsic base portions of a primary base of the first conductivity type for the transistor and (b) first semiconductor dopant of a second conductivity type opposite to the first conductivity type into material of the semiconductor body intended to be at least part of a primary collector of the second conductivity type for the transistor;
• providing body-overlying structure comprising a primary spacing structure which comprises (i) a primary isolating dielectric layer situated along the material of the semiconductor body intended for the base link portion and (ii) a primary spacing component comprising a primary lateral spacing portion of largely non-monocrystalline semiconductor material situated over the dielectric layer above the material of the semiconductor body intended for the base link portion such that largely opposite first and second upper edges of the material of the semiconductor body intended to be the base link portion largely laterally conform to respective largely opposite first and second lower edges of the lateral spacing portion;
• and
• subsequently introducing (a) second semiconductor dopant of the first conductivity type into the semiconductor body to define a primary base contact portion of the base using the lateral spacing portion and any material along its lateral sides as a dopant-blocking shield and (b) second semiconductor dopant of the second conductivity type into the semiconductor body to define a primary emitter of the second conductivity type for the transistor also using the lateral spacing portion and any material along its lateral sides as a dopant-blocking shield such that (i) the emitter and collector are separated from each other by the base so as to form respective primary pn junctions with the base, (ii) the intrinsic base portion is situated below the emitter and above material of the collector, (iii) the base link portion extends between the intrinsic base and base contact portions and laterally separates the emitter from the base contact portion, and (iv) the semiconductor body has an upper surface to which the base contact portion and the emitter extend.