Semiconductor device
AssigneeFujitsu Limited
InventorHiroshi KATAKURA
Life of this patent
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Abstract
A semiconductor device in a continuous diffusion region formed on a semiconductor substrate and having either a P-type or N-type polarity includes: a first transistor formed within the continuous diffusion region; a second transistor formed within the continuous diffusion region and in an area that is different from an area where the first transistor is formed; a third transistor formed within the continuous diffusion region and in an area between the first and second transistors, and having a gate electrode to which a fixed potential is applied; and a fourth transistor formed within the continuous diffusion region and in an area between the second and third transistors, and having a gate electrode to which a fixed potential is applied.
Claims13
A semiconductor device in a continuous diffusion region formed on a semiconductor substrate and having either a P-type or N-type polarity, the device comprising:
- a first transistor formed within the continuous diffusion region;
- a second transistor formed within the continuous diffusion region and in an area that is different from an area where the first transistor is formed;
- a third transistor formed within the continuous diffusion region and in an area between the first and second transistors, and having a gate electrode to which a fixed potential is applied;
- and
- a fourth transistor formed within the continuous diffusion region and in an area between the second and third transistors, and having a gate electrode to which a fixed potential is applied.
Dependencies are inferred from the claim text.