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US 2010/0244141 A1Published application
Threshold adjustment of transistors including high-k metal gate electrode structures comprising an intermediate etch stop layer
AssigneeGlobalfoundries Inc.
InventorsSven Beyer, Markus Lenski, Richard Carter, Klaus Hempel
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Abstract
During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.
Claims25
A method, comprising:
- forming a first gate electrode structure above a first semiconductor region of a semiconductor device and a second gate electrode structure above a second semiconductor region, said first and second gate electrode structures comprising a gate insulation layer including a high-k dielectric material, a metal-containing electrode material and a placeholder material, said first gate electrode structure further comprising an intermediate etch stop liner positioned between said metal-containing electrode material and at least a portion of said placeholder material;
- removing material of said placeholder material in said first and second gate electrode structures to expose one of said metal-containing electrode material and said gate insulation layer in said second gate electrode structure and expose said etch stop liner in said first gate electrode structure;
- adjusting a work function in said second gate electrode structure;
- removing said etch stop liner in said first gate electrode structure;
- and
- forming a metal-containing material in said first and second gate electrode structures.
3 more elements
A method, comprising:
- forming a first part of a first gate electrode structure and a second gate electrode structure;
- selectively forming an intermediate stop liner on said first part of said first gate electrode structure;
- forming a second part of said first and second gate electrode structures above said first part;
- forming a first transistor on the basis of said first gate electrode structure and a second transistor on the basis of said second gate electrode structure;
- removing a portion of said first and second gate electrode structures in a common etch process while using said stop liner as an etch stop material;
- adjusting a work function selectively in said second gate electrode structure;
- removing said stop liner in said first gate electrode structure;
- and
- forming a gate metal in said first and second gate electrode structures.
6 more elements
A semiconductor device, comprising:
- a first transistor comprising a first gate electrode structure that comprises a gate insulation layer including a high-k dielectric material and an electrode metal;
- and
- a second transistor comprising a second gate electrode structure that comprises a gate insulation layer including a high-k dielectric material and an electrode metal, said first and second gate electrode structures comprising the same type of high-k dielectric material and the same type of electrode metal.
Dependencies are inferred from the claim text.