Semiconductor device and production method therefor

A semiconductor device comprising:

• an island-shaped semiconductor layer;
• a first gate dielectric film surrounding a periphery of the island-shaped semiconductor layer;
• a gate electrode surrounding a periphery of the first gate dielectric film;
• a second gate dielectric film surrounding a periphery of the gate electrode;
• a tubular semiconductor layer surrounding a periphery of the second gate dielectric film;
• a first first-conductive-type high-concentration semiconductor layer disposed on top of the island-shaped semiconductor layer;
• a second first-conductive-type high-concentration semiconductor layer disposed underneath the island-shaped semiconductor layer;
• a first second-conductive-type high-concentration semiconductor layer disposed on top of the tubular semiconductor layer;
• and
• a second second-conductive-type high-concentration semiconductor layer disposed underneath the tubular semiconductor layer.

A semiconductor device comprising:

• an island-shaped semiconductor layer;
• a first gate dielectric film surrounding a periphery of the island-shaped semiconductor layer;
• a gate electrode surrounding a periphery of the first gate dielectric film;
• a second gate dielectric film surrounding a periphery of the gate electrode;
• a tubular semiconductor layer surrounding a periphery of the second gate dielectric film;
• a first first-conductive-type high-concentration semiconductor layer disposed on top of the island-shaped semiconductor layer;
• a second first-conductive-type high-concentration semiconductor layer disposed underneath the island-shaped semiconductor layer;
• a first second-conductive-type high-concentration semiconductor layer disposed on top of the tubular semiconductor layer;
• a second second-conductive-type high-concentration semiconductor layer disposed underneath the tubular semiconductor layer;
• a third first-conductive-type high-concentration semiconductor layer disposed underneath the second first-conductive-type high-concentration semiconductor layer and the second second-conductive-type high-concentration semiconductor layer;
• a first semiconductor-metal compound layer formed in a part of sidewalls of the second second-conductive-type high-concentration semiconductor layer and the third first-conductive-type high-concentration semiconductor layer;
• a second semiconductor-metal compound layer formed in an upper portion of the first first-conductive-type high-concentration semiconductor layer;
• and
• a third semiconductor-metal compound layer formed in an upper portion of the first second-conductive-type high-concentration semiconductor layer.

A semiconductor device comprising:

• an island-shaped semiconductor layer;
• a first gate dielectric film surrounding a periphery of the island-shaped semiconductor layer;
• a gate electrode surrounding a periphery of the first gate dielectric film;
• a second gate dielectric film surrounding a periphery of the gate electrode;
• a tubular semiconductor layer surrounding a periphery of the second gate dielectric film;
• a first n+-type semiconductor layer disposed on top of the island-shaped semiconductor layer;
• a second n+-type semiconductor layer disposed underneath the island-shaped semiconductor layer;
• a first p+-type semiconductor layer disposed on top of the tubular semiconductor layer;
• and
• a second p+-type semiconductor layer disposed underneath the tubular semiconductor layer.

A semiconductor device comprising:

• an island-shaped semiconductor layer;
• a first gate dielectric film surrounding a periphery of the island-shaped semiconductor layer;
• a gate electrode surrounding a periphery of the first gate dielectric film;
• a second gate dielectric film surrounding a periphery of the gate electrode;
• a tubular semiconductor layer surrounding a periphery of the second gate dielectric film;
• a first n+-type semiconductor layer disposed on top of the island-shaped semiconductor layer;
• a second n+-type semiconductor layer disposed underneath the island-shaped semiconductor layer;
• a first p+-type semiconductor layer disposed on top of the tubular semiconductor layer;
• a second p+-type semiconductor layer disposed underneath the tubular semiconductor layer;
• a third n+-type semiconductor layer disposed underneath the second n+-type semiconductor layer and the second p+-type semiconductor layer;
• a first semiconductor-metal compound layer formed in a part of sidewalls of the second p+-type semiconductor layer and the third n+-type semiconductor layer;
• a second semiconductor-metal compound layer formed in an upper portion of the first n+-type semiconductor layer;
• and
• a third semiconductor-metal compound layer formed in an upper portion of the first p+-type semiconductor layer.