Semiconductor device and a method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorsKeiichi YOSHIZUMI, Kazuhisa Higuchi, Takayuki Nakaji, Masami Koketsu, Hideki Yasuoka
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AssigneeRenesas Technology Corp.
InventorsKeiichi YOSHIZUMI, Kazuhisa Higuchi, Takayuki Nakaji, Masami Koketsu, Hideki Yasuoka
Estimating the term…
A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the process of manufacturing it, a thick gate insulating film for a high voltage MISFET is formed over an n-type buried layer as an active region and a resistance element IR of an internal circuit is formed over the gate insulating film. Since the thick gate insulating film lies between the n-type buried layer and the resistance element IR, the coupling capacitance produced between the substrate (n-type buried layer) and the resistance element IR is reduced.
1-23. (canceled)
A semiconductor device comprising:
Dependencies are inferred from the claim text.