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US 2010/0244135 A1Published application
Semiconductor device
AssigneeOki Semiconductor Co., Ltd.
InventorMasao Okihara
Life of this patent
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Abstract
In a semiconductor device of a silicon on insulator (SOI) structure having uniform transistor properties, a first distance between a gate electrode forming position of an N type transistor and an end of a P type semiconductor region is greater than a second distance between a gate electrode forming position of the P type transistor and an edge of the N type semiconductor region.
Claims10
A semiconductor device comprising:
- a buried oxide film formed on a support substrate;
- an N type semiconductor region and a P type semiconductor region formed on the buried oxide film;
- a P type transistor formed in the N type semiconductor region;
- and an N type transistor formed in the P type semiconductor region, wherein
- a first distance between a gate electrode of the N type transistor and an edge of the P type semiconductor region is greater than a second distance between a gate electrode of the P type transistor and an edge of the N type semiconductor region.
2 more elements
A semiconductor device comprising:
- a buried oxide film formed on a support substrate;
- a semiconductor region formed on the buried oxide film;
- and at least two transistors formed in the semiconductor region such that the transistors are arranged in parallel, wherein
- a distance between a gate electrode of an outermost one of the transistors and an edge of the semiconductor region is set such that compressive stress is not applied to a channel region of the outermost transistor.
1 more element
Dependencies are inferred from the claim text.