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AssigneeFreescale Semiconductor, Inc.
InventorsKonstantin V. Loiko, Cheong M. Hong, Sung-Taeg Kang, Taras A. Kirichenko, Brian A. Winstead
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A method of making a semiconductor device on a semiconductor layer includes forming a gate dielectric and a first layer of gate material over the gate dielectric. The first layer is etched to remove a portion of the first layer of gate material over a first portion of the semiconductor layer and to leave a select gate portion. A storage layer is formed over the select gate portion and over the first portion of the semiconductor layer. A second layer of gate material is formed over the storage layer. The second layer of gate material is etched to remove a first portion of the second layer of gate material over a first portion of the select gate portion. A portion of the first portion of the select gate is etched out to leave an L-shaped select structure. The result is a memory cell with an L-shaped select gate.
A method of making a semiconductor device on a semiconductor layer, comprising:
A semiconductor device, comprising:
A method of making a semiconductor device on a semiconductor layer, comprising:
Dependencies are inferred from the claim text.