Nonvolatile Memory Device and Method of Manufacturing the Same
AssigneeHynix Semiconductor Inc.
InventorKyeong Bock Lee
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Abstract
A nonvolatile memory device comprises floating gates formed over an active region of a semiconductor substrate, isolation layers formed within respective isolation regions of the semiconductor substrate, first nitridation patterns formed on sidewalls of the floating gates, a first insulating layer, a second nitride layer, a second insulating layer, and a third nitride layer formed on an entire surface of the first nitridation patterns and the isolation layers, and control gates formed over the third nitride layer.
Claims17
A nonvolatile memory device, comprising:
- floating gates formed over an active region of a semiconductor substrate;
- isolation layers formed within respective isolation regions of the semiconductor substrate;
- first nitridation patterns formed on the sidewalls of the floating gates;
- a first insulating layer, a second nitride layer, a second insulating layer, and a third nitride layer formed on an entire surface of the first nitridation patterns and the isolation layers;
- and
- control gates formed over the third nitride layer.
A method of manufacturing a nonvolatile memory device, the method comprising:
- providing a semiconductor substrate;
- forming first conductive patterns over an active region of the semiconductor substrate and forming isolation layers within respective isolation regions of the semiconductor substrate;
- forming a first nitride layer on an entire surface of the isolation layers and the first conductive patterns;
- performing an etch process to isolate portions of the first nitride layer on an upper side of each of the isolation layers and on an upper side of each of the first conductive patterns from each other, thereby forming first nitridation patterns;
- forming a first insulating layer, a second nitride layer, and a second insulating layer on an entire surface of the first nitridation patterns, the first conductive patterns, and the isolation layers;
- and
- forming a second conductive layer over the second insulating layer.
Dependencies are inferred from the claim text.