Semiconductor Structure of a Display Device and Method for Fabricating the Same
AssigneeAu Optronics Corporation
InventorYu-Cheng Chen
Life of this patent
Estimating the term…
Loading patent…
AssigneeAu Optronics Corporation
InventorYu-Cheng Chen
Estimating the term…
A semiconductor structure of a display device and the method for fabricating the same are provided. The semiconductor structure is formed on a substrate having a TFT region and a pixel capacitor region thereon. A TFT, including a gate electrode, a source electrode, a drain electrode, a channel layer, and a gate insulating layer, is formed on the TFT region of the substrate. A pixel capacitor is formed on the pixel capacitor region, wherein the pixel capacitor comprises a bottom electrode formed on a bottom dielectric layer, an interlayer dielectric layer formed on the bottom electrode, a top electrode formed on the interlayer dielectric layer, a contact plug passing through the interlayer dielectric layer and electrically connected to the top and bottom electrodes, a capacitor dielectric layer formed on the top electrode, a transparent electrode formed on the capacitor dielectric layer and electrically connected to the drain electrode.
A method for fabricating a semiconductor structure of a display device, comprising:
A semiconductor structure of display device, comprising:
A pixel structure, comprising:
Dependencies are inferred from the claim text.