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US 2010/0244105 A1Published application
Transistors having temperature stable schottky contact metals
OwnerKiuchul Hwanginventor
Life of this patent
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Abstract
A semiconductor structure having: a semiconductor comprising a indium gallium phosphide and molybdenum metal in Schottky contact with the semiconductor.
Claims9
A semiconductor structure comprising:
- a semiconductor comprising a Indium Gallium Phosphide;
- a molybdenum metal in Schottky contact with the semiconductor.
A semiconductor structure comprising:
- an InGaP semiconductor;
- a molybdenum metal in Schottky contact with the semiconductor.
A transistor, comprising:
- a semiconductor comprising InGaP;
- a gate electrode, such gate electrode comprising a molybdenum metal in Schottky contact with the semiconductor.
Dependencies are inferred from the claim text.