Compound semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorsKozo Makiyama, Toshihide Kikkawa
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Abstract
A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure; a first protective film formed over the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon; and a second protective film formed over the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film.
Claims20
A compound semiconductor device comprising:
- a compound semiconductor laminated structure;
- a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure;
- a first protective film formed over the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon;
- and
- a second protective film formed over the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film.
A manufacturing method of a compound semiconductor device, comprising:
- forming a source electrode, a drain electrode, and a gate electrode over a compound semiconductor laminated structure;
- forming a first protective film including silicon over the compound semiconductor laminated structure between the source electrode and the gate electrode;
- and
- forming a second protective film including more silicon than the first protective film over the compound semiconductor laminated structure between the drain electrode and the gate electrode.
Dependencies are inferred from the claim text.