Semiconductor device and method for manufacturing the same
AssigneeFurukawa Electric Co., Ltd.
InventorsTakuya Kokawa, Sato Yoshihiro, Kato Sadahiro, Iwami Masayuki
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Abstract
There is provided a method for fabricating a semiconductor device capable of setting carbon concentration within crystal to a desirable value while improving electron mobility. The carbon concentration within a buffer layer is controlled by introducing material gas of hydrocarbon or organic compounds containing carbon such as propane as a dopant in forming the buffer layer by introducing trimethylgallium (TMGa) and ammonium (NH3) as gaseous nitride compound semiconductor materials into a chamber in which a substrate is disposed.
Claims6
A method for fabricating a semiconductor device, comprising a step of controlling carbon concentration of a nitride compound semiconductor layer by introducing material gas containing two or more carbons in a molecular formula as a dopant in forming the nitride compound semiconductor layer on a Si substrate.
A semiconductor device comprising a nitride compound semiconductor layer formed on a Si substrate, wherein
- the nitride compound semiconductor layer has carbon concentration equal to or more than 7×1018/cm3 and equal to or less than 1×1020/cm3 and has a full width at half maximum of X-ray diffraction setting a (30-32) surface as a diffractive surface is equal to or less than 2100 arcsec.
Dependencies are inferred from the claim text.