Double heterojunction bipolar transistor having graded base region
AssigneeAgilent Technolgies, Inc.
InventorBing-Ruey Wu
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises: a heterojunction, comprises a first region comprising a first III-V semiconductor; a second region adjacent to the first region and comprising a second III-V semiconductor material, wherein the second III-V semiconductor material comprises a material of graded concentration over a width of the second region; and a third region adjacent to the second region and comprising a third III-V semiconductor material, wherein the graded concentration is selection to provide substantially no conduction band discontinuity at a junction of the second region and the third region, or to provide a type I semiconductor junction at the junction of the second region and the third region.
Claims16
A semiconductor device comprising a heterojunction, comprising:
- a first region comprising a first III-V semiconductor;
- a second region adjacent to the first region and comprising a second III-V semiconductor material, wherein the second III-V semiconductor material comprises a material of graded concentration over a width of the second region;
- and
- a third region adjacent to the second region and comprising a third III-V semiconductor material, wherein the graded concentration is selection to provide substantially no conduction band discontinuity at a junction of the second region and the third region, or to provide a type I semiconductor junction at the junction of the second region and the third region.
A double heterojunction bipolar transistor (DHBT), comprising:
- a first region comprising a first III-V semiconductor;
- a second region forming a first heterojunction with the first region and comprising AlxGa1-xAsSb wherein the concentration of Al is graded concentration over a width of the second region;
- and
- a third region forming a second heterojunction with the second region and comprising a second III-V semiconductor, wherein the graded concentration is selection to provide substantially no conduction band discontinuity at a junction of the second region and the third region, or to provide a type I semiconductor junction at the junction of the second region and the third region.
Dependencies are inferred from the claim text.