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US 2010/0244098 A1Published application
Semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorMitsunori Yokoyama
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of AlN or AlxGa1-xN (0.4<x<1); and an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor.
Claims7
A semiconductor device comprising:
- a semiconductor layer made of Fe-doped GaN;
- a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of AlN or AlxGa1-xN (0.4<x<1);
- and
- an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor.
1 more element
Dependencies are inferred from the claim text.