Power semiconductor apparatus
AssigneeHitachi, Ltd.
InventorsKatsumi ISHIKAWA, Kazutoshi Ogawa
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Abstract
A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted.
Claims21
A power semiconductor apparatus provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, the power semiconductor apparatus comprising:
- a first insulated metal substrate on which the first power semiconductor device is mounted;
- a first heat dissipation metal base on which the first insulated metal substrate is mounted;
- a second insulated metal substrate on which the second power semiconductor device is mounted;
- and
- a second heat dissipation metal base on which the second insulated metal substrate is mounted.
A power semiconductor apparatus provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance,
- wherein a main terminal to which the first power semiconductor device is connected is electrically separated from a main terminal to which the second power semiconductor device is connected.
Dependencies are inferred from the claim text.