Photoelectronic element and the manufacturing method thereof
AssigneeEpistar Corporation
InventorChiu-Lin YAO
Life of this patent
Estimating the term…
Abstract
A photoelectronic element includes a composite substrate including an electrically insulative substrate having a chamber; an intermediate layer; and an electrically conductive substrate; a bonding layer including an electrically conductive region and an electrically insulative region; a first current spreading layer; a first semiconductor stacked layer including a first semiconductor layer, an active layer, and a second semiconductor layer; a current blocking layer; a second current spreading layer; and a first electrode.
Claims29
A photoelectronic element comprising:
- a composite substrate comprising an electrically insulative substrate having a chamber and an electrically conductive substrate disposed under the electrically insulative substrate and within the chamber wherein the electrically conductive substrate includes a contact surface;
- a bonding layer disposed on the composite substrate and comprising an electrically conductive region disposed on the contact surface and an electrically insulative region adjacent to the electrically conductive region;
- a first semiconductor stacked layer disposed on the bonding layer and comprising a first active layer;
- and
- a first electrode disposed on the first semiconductor stacked layer, wherein the electrically conductive region is directly under the first electrode.
A photoelectronic element, comprising:
- a composite substrate comprising an electrically insulative substrate;
- and an electrically conductive substrate disposed under the electrically insulative substrate and within the electrically insulative substrate and comprising a contact surface;
- a bonding layer disposed on the composite substrate and comprising an electrically conductive region disposed on the contact surface for electrically connecting thereto, and an electrically insulative region adjacent to the electrically conductive region and disposed on the electrically insulative substrate;
- a first semiconductor stacked layer disposed on the bonding layer and comprising a first active layer comprising a high band gap region directly above the electrically conductive region;
- and
- a first electrode disposed on the first semiconductor stacked layer, wherein the electrically conductive region is directly under the first electrode.
A photoelectronic element, comprising:
- a composite substrate;
- a bonding layer disposed on the composite substrate and comprising an electrically conductive region disposed on the composite substrate;
- and an electrically insulative region adjacent to the electrically conductive region and disposed on the composite substrate;
- a first semiconductor stacked layer disposed on the bonding layer and comprising a first active layer;
- and
- a first electrode and a second electrode respectively disposed on the first semiconductor stacked layer, wherein the first electrode is directly above the electrically conductive region.
A photoelectronic element, comprising:
- a composite substrate;
- a bonding layer comprising an electrically conductive region disposed on the composite substrate, and an electrically insulative region adjacent to the electrically conductive region and disposed on the composite substrate;
- a first semiconductor stacked layer disposed on the bonding layer and comprising a first active layer comprising a high band gap region;
- and
- a first electrode disposed on the first semiconductor stacked layer, wherein the first electrode is directly above the high band gap region.
Dependencies are inferred from the claim text.