Semiconductor light-emitting device and method of manufacturing the same

A method of manufacturing a semiconductor light-emitting device comprising:

• forming successively on a substrate, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
• forming a resist pattern having an overhanging shape, in cross section, in a predetermined position on the second conductivity type semiconductor layer;
• forming a ridge waveguide in the second conductivity type semiconductor layer by etching the second conductivity type semiconductor layer, using the resist pattern as a mask;
• forming, on the resist pattern and the second conductivity type semiconductor layer, an insulating film having a first opening located on a portion of a top face of the ridge waveguide, using the resist pattern;
• forming on the insulating film a metal film having a second opening with a width larger thanes width of the first opening;
• lifting off, by removing the resist pattern, portions of the insulating film and the metal film located on the resist pattern;
• etching, using the metal film as a mask, edges of the insulating film on the ridge waveguide;
• and
• forming a metal electrode on the metal film, and on the second conductivity type semiconductor layer, through the first and the second openings.