High output group iii nitride light emitting diodes
AssigneeCree, Inc.
InventorsJohn Adam Edmond, Michael J. Bergmann, David T. Emerson, Kevin Ward Haberern
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Abstract
A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
Claims38
A light emitting diode having an area of at least 100,000 square microns and an external quantum efficiency greater than 50 percent at 20 milliamps current at its dominant wavelength between 390 and 540 nanometers.
A light emitting diode having and an area of at least 100,000 square microns and an optical power efficiency of at least 50 percent at a dominant wavelength between 450 and 460 nanometers.
Dependencies are inferred from the claim text.