Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorMasahiko Kuraguchi
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Abstract
A semiconductor device which is capable of operating at an operation frequency “f”, includes a substrate, a first element unit and a second element unit. The substrate has a thermal diffusion coefficient “D”. The first element unit is formed on the substrate. The first element includes a first active element. The second element unit is adjacent to the first element unit on the substrate. The second element includes a second active element. The second active element acts on a different timing from the first active element. Moreover, a distance of between a first gravity center of the first element unit and a second gravity center of the second element unit is equal to or less than twice of a thermal diffusion length (D/πf)1/2.
Claims12
A semiconductor device which is capable of operating at an operation frequency “f”, comprising:
- a substrate having a thermal diffusion coefficient “D”;
- a first element unit formed on the substrate, the first element including a first active element;
- and
- a second element unit being adjacent to the first element unit on the substrate, the second element including a second active element, the second active element acting on a different timing from the first active element,
- wherein
- a distance of between a first gravity center of the first element unit and a second gravity center of the second element unit is equal to or less than twice of a thermal diffusion length (D/πf)1/2.
A semiconductor device which is capable of operating at an operation frequency “f”, comprising:
- a substrate having a thermal diffusion coefficient “D”;
- a first element unit formed on the substrate, the first element including a first active element;
- and
- a second element unit being adjacent to the first element unit on the substrate, the second element including a second active element, the second active element acting on a different timing from the first active element,
- wherein
- the first element unit and the second element unit are repeatedly arranged with a cycle, a half of the cycle is equal to or less than twice of a thermal diffusion length (D/πf)1/2.
Dependencies are inferred from the claim text.