Semiconductor device and method for manufacturing the same
AssigneePanasonic Corporation
InventorsMasashi Hayashi, Shin Hasimoto
Life of this patent
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Abstract
A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate (1) including a silicon carbide layer (2); a high-concentration impurity region (4) provided in the silicon carbide layer (2); an ohmic electrode (9) electrically connected with the high-concentration impurity region (4); a channel region electrically connected with the high-concentration impurity region; a gate insulating layer (14) provided on the channel region; and a gate electrode (7) provided on the gate insulating layer (14). The ohmic electrode (9) contains an alloy of titanium, silicon and carbon, and the gate electrode (7) contains titanium silicide.
Claims24
A semiconductor device, comprising:
- a silicon carbide semiconductor substrate including a silicon carbide layer;
- a high-concentration impurity region provided in the silicon carbide layer;
- an ohmic electrode electrically connected with the high-concentration impurity region;
- a channel region electrically connected with the high-concentration impurity region;
- a gate insulating layer provided on the channel region;
- and
- a gate electrode provided on the gate insulating layer;
- wherein the ohmic electrode contains an alloy of titanium, silicon and carbon, and the gate electrode contains titanium silicide.
A semiconductor device production method, comprising:
- step (a) of preparing a silicon carbide semiconductor substrate including a silicon carbide layer having a high-concentration impurity region and a gate insulating layer covering a semiconductor region including a channel region;
- step (b) of forming a polysilicon layer on the gate insulating layer;
- step (c) of forming a titanium layer on each of the high-concentration impurity region and the polysilicon layer;
- and
- step (d) of thermally treating the titanium layers to cause silicon in the polysilicon layer and silicon and carbon in the high-concentration impurity region to react with the titanium layers, thereby forming an ohmic electrode containing an alloy of titanium, silicon and carbon on the high-concentration impurity region and forming a gate electrode containing titanium silicide on the gate insulating layer.
Dependencies are inferred from the claim text.