Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures

A semiconductor device comprising:

• a semiconductor layer having a first conductivity type;
• a terminal region of the first conductivity type within the semiconductor layer;
• a well region of a second conductivity type within the semiconductor layer wherein the well region is adjacent at least portions of the terminal region within the semiconductor layer, wherein a depth of the well region into the semiconductor layer is greater than a depth of the terminal region into the semiconductor layer, and wherein the first and second conductivity types are different;
• an epitaxial semiconductor layer on the semiconductor layer including the terminal region and the well region wherein the epitaxial semiconductor layer includes a terminal contact region of the first conductivity type therein, and wherein the terminal contact region provides electrical contact with the terminal region;
• and
• an ohmic contact on the terminal contact region.

A method of forming a semiconductor device, the method comprising:

• forming a terminal region of a first conductivity type within a semiconductor layer of the first conductivity type;
• forming a well region of a second conductivity type within the semiconductor layer wherein the well region is adjacent at least portions of the terminal region within the semiconductor layer, wherein a depth of the well region into the semiconductor layer is greater than a depth of the terminal region into the semiconductor layer, and wherein the first and second conductivity types are different;
• forming an epitaxial semiconductor layer on the semiconductor layer including the terminal region and the well region wherein the epitaxial semiconductor layer includes a terminal contact region of the first conductivity type therein, and wherein the terminal contact region provides electrical contact with the terminal region;
• and
• forming an ohmic contact on the terminal contact region.

A method of forming a semiconductor device, the method comprising:

• providing a semiconductor layer of a first conductivity type, wherein the semiconductor layer includes a terminal region of a first conductivity type within the semiconductor layer and a well region of a second conductivity type within the semiconductor layer wherein the well region is adjacent at least portions of the terminal region within the semiconductor layer, wherein a depth of the well region into the semiconductor layer is greater than a depth of the terminal region into the semiconductor layer, and wherein the first and second conductivity types are different;
• forming an epitaxial semiconductor layer on the semiconductor layer;
• forming a terminal contact region of the first conductivity type through the epitaxial semiconductor layer, wherein the terminal contact region provides electrical contact with the terminal region;
• and
• forming an ohmic contact on the terminal contact region.