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AssigneeForschungsverbud Berlin E.V.
InventorsIbrahim M Khalil, Eldad Bahat-Treidel, Hans-Joachim Wuerfl, Oliver Hilt
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The invention concerns about electrical devices having improved transfer characteristics and a corresponding method of tailoring the transfer characteristics of such electrical devices. According to one aspect of the invention, there is provided an electrical device including at least two transistor segments or at least two transistors connected in parallel or in series characterized in that the at least two segments of the transistor or the at least two of the transistors have a different single transfer characteristic due to at least one of different topology and different material properties.
An electrical device including at least two recess gate high electron mobility transistor segments or at least two recess gate high electron mobility transistors connected in parallel or in series, wherein the at least two segments of the recess gate high electron mobility transistor or the at least two of the recess gate high electron mobility transistors have a different single transfer characteristic due to a different topology and optionally different material properties, characterized in that the different topology includes different recess depths which are selected such that linearity of the electrical device is higher than of each of the at least two recess gate high electron mobility transistor segments or of the at least two recess gate high electron mobility transistors alone.
Dependencies are inferred from the claim text.