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US 2010/0244041 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorsToshiyuki OISHI, Yoshitsugu Yamamoto, Hiroshi Otsuka, Koji Yamanaka, Akira Inoue
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Abstract
An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer.
Claims8
A semiconductor device comprising:
- a channel layer where electrons move;
- a barrier layer provided on the channel layer and forming two dimensional electron gas in the channel layer;
- and
- a buffer layer provided under the channel layer and having an isolation layer for suppressing a leakage current at least between the channel layer and the buffer layer.
1 more element
Dependencies are inferred from the claim text.