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US 2010/0244023 A1Published application
Programmable resistance memory
AssigneeOvonyx, Inc.
InventorWard Parkinnson
Life of this patent
Estimating the term…
Abstract
A rewritable nonvolatile memory includes a test cell that is dedicated to testing the storage characteristics of other, similar, storage cells formed within the same integrated circuit memory. The test cell may be share the same structure and composition as storage cells and may be positioned proximate storage cells.
Claims26
An integrated circuit, comprising:
- an array of rewritable nonvolatile memory cells;
- and
- a test cell configured to provide information related to performance characteristics of rewritable nonvolatile memory cells within the array.
An electronic system comprising:
- an array of rewritable nonvolatile memory cells;
- a test cell configured to provide information related to performance characteristics of rewritable nonvolatile memory cells within the array;
- and
- controller circuitry configured to access the array of memory cells.
1 more element
A method, comprising the steps of:
- forming a rewritable nonvolatile test cell within an integrated circuit memory;
- and
- forming an array of rewritable nonvolatile storage cells within the integrated circuit memory.
Dependencies are inferred from the claim text.