Thin-film transistor (tft) with an extended oxide channel
OwnerRandy HOFFMAN, James W. STASIAKinventors
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Abstract
In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric adjacent the gate electrode. The TFT also includes a source electrode at least partially aligned with the gate electrode and separated from the gate electrode by the gate dielectric. The TFT also includes a drain electrode laterally offset from the gate electrode by at least 2 μm and separated from the gate electrode by the gate dielectric. The TFT also includes an extended oxide channel between the source electrode and the drain electrode, wherein a portion of the extended oxide channel is ungated.
Claims20
A thin-film transistor (TFT), comprising:
- a gate electrode;
- a gate dielectric adjacent the gate electrode;
- a source electrode at least partially aligned with the gate electrode and separated from the gate electrode by the gate dielectric;
- a drain electrode laterally offset from the gate electrode by at least about 2 μm and separated from the gate electrode by the gate dielectric;
- and
- an extended oxide channel between the source electrode and the drain electrode, wherein a portion of said extended oxide channel is ungated.
A method, comprising:
- constructing a thin-film transistor (TFT) by
- depositing a gate electrode;
- depositing a gate dielectric adjacent the gate electrode;
- depositing an oxide channel adjacent the gate dielectric and across from the gate electrode, wherein the oxide channel extends beyond an edge of the gate electrode;
- and
- depositing a source electrode and a drain electrode in contact with the oxide channel, the drain electrode being laterally offset from the gate electrode by at least about 2 μm.
An electronic device, comprising:
- a thin-film transistor (TFT), the TFT having a multi-component oxide channel with a gated portion and an ungated portion, wherein the ungated portion is at least about 2 μm in length;
- and
- a component coupled to the TFT, wherein the component selectively receives power from the TFT.
Dependencies are inferred from the claim text.