Organic electronic device, organic electronic device manufacturing method, organic electronic device manufacturing apparatus, substrate processing system, protection film structure and storage medium with control program stored therein

A method of manufacturing an organic electronic device, the method comprising:

• forming an organic element on a target object;
• and
• stacking a stress relaxing layer to be adjacent to the organic element and cover the organic element, to serve as one layer included in a protection film that protects the organic element, wherein the stress relaxing layer contains a carbon component and contains no nitrogen components;
• and
• stacking a sealing layer on the stress relaxing layer, to serve as another layer included in the protection film, wherein the sealing layer contains a nitrogen component.

An apparatus for manufacturing an organic electronic device, wherein the apparatus:

• forms an organic element on a target object;
• stacks a stress relaxing layer to be adjacent to the organic element and cover the organic element, to serve as one layer included in a protection film that covers the organic element, wherein the stress relaxing layer contains a carbon component and contains no nitrogen components;
• and
• stacks a sealing layer on the stress relaxing layer, to serve as another layer included in the protection film, wherein the sealing layer contains a nitrogen component.

A substrate processing system in which a substrate processing apparatus comprising a deposition apparatus, a first microwave plasma processing apparatus, and a second microwave plasma processing apparatus is arranged in a cluster structure, and an organic electronic device is manufactured while maintaining a space where a target object moves from an area where the target object is carried in to an area where the target object is carried out in a desired depressurized state,

• wherein the substrate processing system:
• forms an organic element within a processing chamber of the deposition apparatus;
• generates plasma by exciting a gas including a butyne gas by microwave power and forms an amorphous hydrocarbon film to be adjacent to the organic element and cover the organic element by using the plasma, within a processing chamber of the first microwave plasma processing apparatus;
• and
• generates plasma by exciting a gas including a silane gas and a nitrogen gas by microwave power and forms a first silicon nitride film on the amorphous hydrocarbon film by using the plasma, within a processing chamber of the second microwave plasma processing apparatus.