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US 2010/0243989 A1Published application
Semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsIsao Makabe, Ken Nakata
Life of this patent
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Abstract
A semiconductor device includes a substrate, a superlattice buffer layer that is formed on the substrate and is composed of first AlxGa1-xN layers and second AlxGa1-xN layers having an Al composition greater than that of the first AlxGa1-xN layers, the first and second AlxGa1-xN layers being alternately stacked one by one, both the Al compositions of the first and second AlxGa1-xN layers being greater than 0.3, and a difference in Al composition between the first and second AlxGa1-xN layers being greater than 0 and smaller than 0.6.
Claims10
A semiconductor device comprising:
- a substrate;
- a superlattice buffer layer that is formed on the substrate and is composed of first AlxGa1-xN layers and second AlxGa1-xN layers having an Al composition greater than that of the first AlxGa1-xN layers, the first and second AlxGa1-xN layers being alternately stacked one by one,
- both the Al compositions of the first and second AlxGa1-xN layers being greater than 0.3, and
- a difference in Al composition between the first and second AlxGa1-xN layers being greater than 0 and smaller than 0.6.
1 more element
Dependencies are inferred from the claim text.