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US 2010/0243983 A1Published application
Controlled localized defect paths for resistive memories
AssigneeIntermolecular, Inc.
InventorsTony Chiang, Michael Miller, Prashant Phatak
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Abstract
Controlled localized defect paths for resistive memories are described, including a method for forming controlled localized defect paths including forming a first electrode forming a metal oxide layer on the first electrode, masking the metal oxide to create exposed regions and concealed regions of a surface of the metal oxide, and altering the exposed regions of the metal oxide to create localized defect paths beneath the exposed regions.
Claims20
A method for forming a resistive switching memory element comprising:
- forming a first electrode;
- forming a metal oxide layer on the first electrode;
- masking the metal oxide layer to create exposed regions and concealed regions of a surface of the metal oxide layer;
- and
- altering the exposed regions of the metal oxide layer and creating localized defect paths beneath the exposed regions.
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A non-volatile resistive switching memory element comprising:
- a first electrode;
- a metal oxide layer over the first electrode, wherein the metal oxide layer comprises a material having a bandgap greater than 4 eV, and non-metallic defect paths in localized regions of the metal oxide layer;
- and
- a second electrode of the metal oxide layer.
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A method comprising:
- forming a first electrode having a first work function;
- forming a metal oxide layer over the first electrode, the metal oxide layer having a bandgap greater than 4 eV;
- masking the metal oxide layer to create exposed regions and concealed regions in of a surface of the metal oxide layer;
- altering exposed regions of the metal oxide layer and creating defect paths;
- annealing the metal oxide layer to form localized channels from the defect paths;
- and
- depositing a second electrode having a second work function that is between 0.1 and 1.0 eV different from the first work function.
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Dependencies are inferred from the claim text.