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US 2010/0227274 A1Published application
Positive resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Koji Hasegawa, Seiichiro Tachibana
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Abstract
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
Claims12
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group having the general formula (1):
- wherein R1 and R2 each are hydrogen, a C1-C4 alkyl, alkoxy, alkanoyl or alkoxycarbonyl group, hydroxyl, C6-C10 aryl group, halogen, or cyano group, R is hydrogen, a straight, branched or cyclic C1-C12 alkyl group which may have an oxygen or sulfur atom, C2-C12 alkenyl group, C2-C12 alkynyl group, or C6-C10 aryl group, R3 to R6 are hydrogen or a pair of R3 and R4, R4 and R5, or R5 and R6 may bond together to form a benzene ring, and m and n each are an integer of 1 to 4.
Dependencies are inferred from the claim text.