Light Emitting Apparatus

A light emitting apparatus comprising:

• a gate metal positioned between a p-type contact and an n-type contact;
• a wide bandgap semiconductor positioned below and attached to the gate metal;
• a Ge or Si1-zGez channel to radiate via direct band transition, the Ge or Si1-zGez channel positioned below and attached to the wide bandgap semiconductor;
• a buffer comprised of silicon and germanium;
• and
• a silicon substrate positioned below and attached to the buffer.

A light emitting apparatus comprising a heterostructure, the heterostructure consisting essentially of

• a gate metal positioned between a p-type contact and an n-type contact,
• a gate oxide or other dielectric stack positioned below and attached to the gate metal,
• a Ge or Si1-zGez channel to radiate via direct band transition, the Ge or Si1-zGez channel positioned below and attached to the gate dielectric stack,
• a buffer comprised of silicon and germanium, and
• a silicon substrate positioned below and attached to the buffer;
• or the heterostructure consisting essentially of:
• a gate metal positioned between a p-type contact and an n-type contact,
• a wide bandgap semiconductor positioned below and attached to the gate metal,
• a Ge or Si1-zGez channel to radiate via direct band transition, the Ge or Si1-zGez channel positioned below and attached to the wide bandgap semiconductor,
• a buffer comprised of silicon and germanium, and
• a silicon substrate positioned below and attached to the buffer.