# US 2010/0167908 A1 · Dielectric porcelain composition for use in electronic devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0167908 A1 - Document ID: US20100167908A1 - Status: Published application - Kind: A1 - Application number: 11/993,722 - Filed: 2005-06-24 - Published: 2010-07-01 - Earliest claimed: 2005-06-24 - Assignees: Hitachi Metals, Ltd. - Inventors: Tomoyuki Tada; Kazuhiro Nishikawa; Kazuya Toji; Kazuhiro Kura; Takeshi Shimada - Web page: https://patentgrep.com/patent/US20100167908A1 ## CPC - H01B 3/12: ceramics - C01G 23/003: {Titanates (C01G23/001 takes precedence)} - C04B 35/465: based on alkaline earth metal titanates - C04B 35/6262: {of calcined, sintered clinker or ceramics} - C04B 35/62695: {Granulation or pelletising (devices for shaping artificial aggregates from ceramic mixtures B28B1/004)} - C01P 2002/50: Solid solutions - C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram - C01P 2006/32: Thermal properties - C01P 2006/40: Electric properties - C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime - C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina - C04B 2235/3222: Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4) - C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide - C04B 2235/3232: Titanium oxides or titanates, e.g. rutile or anatase - C04B 2235/3286: Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate - C04B 2235/5436: micrometer sized, i.e. from 1 to 100 micron - C04B 2235/608: Green bodies or pre-forms with well-defined density - C04B 2235/77: Density - C04B 2235/786: Micrometer sized grains, i.e. from 1 to 100 micron - C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20) - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS ## Abstract The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant εr is high, the Qf value is high and, the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO2 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain α-Al2O3 in the structure can be obtained, and the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. ## Claims ### Claim 1 A dielectric porcelain composition for use in electronic devices, which has a compositional formula represented by xLn(Al1-yGay)O3-(1−x)CaTiO3 wherein Ln represents at least one kind of rare earth elements, wherein x and y in the compositional formula each satisfy the following values: 0.22≦x≦0.37, and 0