# US 2010/0167536 A1 · Method for removing hardened polymer residue

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- Number: US 2010/0167536 A1
- Document ID: US20100167536A1
- Status: Published application
- Kind: A1
- Application number: 12/643,911
- Filed: 2009-12-21
- Published: 2010-07-01
- Earliest claimed: 2008-12-29
- Inventors: Chung-Kyung Jung
- Web page: https://patentgrep.com/patent/US20100167536A1

## CPC

- H10W 20/031: {of conductive parts of the interconnections}
- H10P 50/71: {using masks for conductive or resistive materials}
- H10P 70/273: {the processing being a delineation of conductive layers, e.g. by RIE}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for efficiently removing hardened polymer residues generated in the process of forming metal lines. The method includes forming a metal layer over a lower film, forming a sacrificial protective film over the metal layer, forming a photosensitive pattern over the sacrificial protective film, forming a metal line by selectively etching the sacrificial protective film and the metal layer using the photosensitive pattern as a mask such that a residual sacrificial protective film is formed over the metal line, and then removing the residual sacrificial protective film from the metal line.

## Claims

### Claim 1

A method comprising:
forming a metal layer over a lower film;
forming a sacrificial protective film over the metal layer;
forming a photosensitive pattern over the sacrificial protective film;
forming a metal line by selectively etching the sacrificial protective film and the metal layer using the photosensitive pattern as a mask such that a residual sacrificial protective film is formed over the metal line; and then
removing the residual sacrificial protective film from the metal line.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming the metal line comprises forming a polymer over the sidewall of the metal line during the selective etching of the sacrificial protective film and the metal layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein removing the residual sacrificial protective film comprises simultaneously removing polymers formed over the metal line.

### Claim 4 (depends on 3)

The method of claim 3, further comprising, after simultaneously removing the residual sacrificial protective film and the polymer, performing a cleaning process in order to remove residual polymers.

### Claim 5 (depends on 4)

The method of claim 4, wherein performing the cleaning process is done using a cleaning solution comprising deionized water and at least one of HF, H2SO4 and H2O2.

### Claim 6 (depends on 1)

The method of claim 1, wherein forming the sacrificial protective film comprises depositing a nitrogen-doped polymer over the metal layer.

### Claim 7 (depends on 6)

The method of claim 6, wherein the nitrogen-doped polymer is formed at a thickness in a range between several nanometers to several tens of nanometers.

### Claim 8 (depends on 7)

The method of claim 7, wherein the nitrogen-doped polymer is deposited using plasma enhanced chemical vapor deposition (PECVD).

### Claim 9 (depends on 8)

The method of claim 8, wherein the PECVD is performed using nitrogen (N2) and ammonia (NH3) gas and a benzene-ring precursor.

### Claim 10 (depends on 9)

The method of claim 9, wherein the benzene-ring precursor comprises methylcyclohexane.

### Claim 11 (depends on 9)

The method of claim 9, wherein the benzene-ring precursor comprises ethylcyclohexane.

### Claim 12 (depends on 8)

The method according to claim 8, wherein the PECVD is performed at a temperature in a range between 60 to 80° C.

### Claim 13 (depends on 1)

The method of claim 1, wherein removing the residual sacrificial protective film is performed by a plasma-treatment process.

### Claim 14 (depends on 13)

The method of claim 13, wherein the plasma-treatment process uses oxygen (O2).

### Claim 15 (depends on 14)

The method of claim 14, wherein removing the residual sacrificial protective film comprises simultaneously removing hardened polymer residues formed over the residual sacrificial protective film.

### Claim 17

A method comprising:
forming a metal layer over a semiconductor substrate;
forming a polymer film over the metal layer;
forming a photoresist pattern over the polymer film;
forming a metal line by selectively etching the polymer film and the metal layer such that residual polymers from the polymer film are formed on the metal line; and then removing the residual polymers from the metal line.

### Claim 18 (depends on 17)

The method of claim 17, wherein polymer film comprises a nitrogen-doped polymer film.

### Claim 19 (depends on 17)

The method of claim 17, wherein removing the residual polymer film is performed by a plasma-treatment process using oxygen (O2).

### Claim 20

A method comprising:
forming a metal layer over a semiconductor substrate;
forming a polymer film over the metal layer;
forming a photoresist pattern over the polymer film;
forming a metal line by selectively etching the polymer film and the metal layer such that residual polymers from the polymer film are formed on the metal line;
removing the residual polymers from the metal line; and then
performing a cleaning process in order to remove additional residual polymers.