# US 2010/0167531 A1 · Semiconductor device and method for manufacturing the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2010/0167531 A1
- Document ID: US20100167531A1
- Status: Published application
- Kind: A1
- Application number: 12/643,913
- Filed: 2009-12-21
- Published: 2010-07-01
- Earliest claimed: 2008-12-30
- Inventors: Jeong-Ho Park
- Web page: https://patentgrep.com/patent/US20100167531A1

## CPC

- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10W 20/071: {of dielectric parts thereof}
- H10W 20/084: {for dual-damascene structures}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device and a method for manufacturing the same includes sequentially laminating a first dielectric film, an etch-blocking film and a second dielectric film on and/or over a semiconductor substrate, forming a photosensitive film mask to open a trench region in the second dielectric film, etching the second dielectric film using the photosensitive film mask as an etching mask until the etch-blocking film is exposed to form the trench, and then forming a copper metal layer in the trench at uniform thickness.

## Claims

### Claim 1

A method comprising:
sequentially laminating a first dielectric film, an etch-blocking film and a second dielectric film over a semiconductor substrate;
forming a photosensitive film mask over the second dielectric film to expose a trench region in the on the second dielectric film;
forming a trench in the on the second dielectric film by etching the second dielectric film using the photosensitive film mask as an etching mask;
forming a copper metal layer over the second dielectric film and embedding the trench; and
polishing the copper metal layer until the second dielectric film is etched such that the copper metal layer remains only in the trench.

### Claim 2 (depends on 1)

The method of claim 1, wherein the trench exposes the etch-blocking film.

### Claim 3 (depends on 1)

The method of claim 1, further comprising forming a polish-blocking film over the second dielectric film.

### Claim 4 (depends on 3)

The method of claim 3, wherein the polish-blocking film comprises a nitride film.

### Claim 5 (depends on 3)

The method of claim 3, wherein the polish-blocking film comprises an SiC film.

### Claim 6 (depends on 3)

The method of claim 3, wherein the photosensitive film mask is formed over the polish-blocking film.

### Claim 7 (depends on 6)

The method of claim 6, wherein the polish-blocking film is etched when forming the trench;

### Claim 8 (depends on 7)

The method of claim 7, wherein the copper metal layer is formed over the polish-blocking film while embedding the trench; and

### Claim 9 (depends on 8)

The method of claim 8, wherein polishing the copper metal layer is carried out until the polish-blocking film is exposed.

### Claim 10 (depends on 1)

The method of claim 1, further comprising forming a diffusion-blocking film over the resulting structure obtained after polishing the copper metal layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the diffusion-blocking film comprises a nitride film.

### Claim 12 (depends on 10)

The method of claim 10, wherein the diffusion-blocking film comprises an SiC film.

### Claim 13 (depends on 10)

The method of claim 10, wherein the diffusion-blocking film comprises one of titanium nitride (TiN), tantalum nitride (TaN), tantalum (Ta) or a combination thereof.

### Claim 14 (depends on 1)

The method of claim 1, wherein the etch-blocking film comprises a nitride film.

### Claim 15

A method comprising:
sequentially laminating a first dielectric film, a second dielectric film and a polish-blocking film over a semiconductor substrate;
forming a photosensitive film mask over the polish-blocking film to expose a trench region in the second dielectric film;
forming a trench by etching the second dielectric film and the polish-blocking film using the photosensitive film mask as an etching mask;
forming a copper metal layer over the polish-blocking film and embedding the trench; and then
polishing the copper metal layer until the top of the polish-blocking film is etched to allow the copper metal layer to remain only in the trench.

### Claim 16 (depends on 15)

The method of claim 15, further comprising forming a diffusion-blocking film over the resulting structure obtained after polishing the copper metal layer.

### Claim 17 (depends on 16)

The method of claim 16, wherein the diffusion-blocking film comprises one of a nitride film and an SiC film.

### Claim 18 (depends on 16)

The method of claim 16, wherein the diffusion-blocking film comprises one of titanium nitride (TiN), tantalum nitride (TaN), tantalum (Ta) or a combination thereof.

### Claim 19 (depends on 15)

The method of claim 15, wherein the polish-blocking film comprises one of a nitride film and an SiC film.

### Claim 20

A method comprising:
sequentially laminating a first dielectric film, a second dielectric film and a polish-blocking film;
forming a photosensitive film mask over the polish-blocking film to expose a trench region in the second dielectric film;
forming a trench in the second dielectric film using the photosensitive film mask as an etching mask;
forming a copper metal layer over the polish-blocking film and embedding the trench; and then
polishing the copper metal layer to expose an uppermost surface of the polish-blocking film.