# US 2010/0167489 A1 · Mim capacitor and method of fabricating the same

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- Number: US 2010/0167489 A1
- Document ID: US20100167489A1
- Status: Published application
- Kind: A1
- Application number: 12/492,169
- Filed: 2009-06-26
- Published: 2010-07-01
- Earliest claimed: 2008-06-26
- Inventors: Seok-Joon Oh
- Web page: https://patentgrep.com/patent/US20100167489A1

## CPC

- H10D 1/692: {Electrodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of fabricating an MIM capacitor may include a first electrode formed on and/or over a semiconductor substrate, a dielectric layer composed of an oxygen material formed on and/or over the first electrode under an oxygen atmosphere. A second electrode is formed on and/or over the dielectric layer. Because the dielectric layer is formed under an oxygen atmosphere, an oxygen composition ratio of the dielectric layer is increased.

## Claims

### Claim 1

A method comprising:
forming a first electrode over a semiconductor substrate; and then
forming a dielectric layer over the first electrode under an oxygen atmosphere; and then
forming a plurality of second electrodes over the dielectric layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the dielectric layer comprises SrTiO3.

### Claim 3 (depends on 1)

The method of claim 1, wherein forming the dielectric layer comprises:
providing a Nb-doped SrTiO3 target and the semiconductor substrate including the first electrode in a chamber;
projecting a laser on the Nb-doped SrTiO3 target under an oxygen atmosphere.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first electrode and the second electrodes each comprise TiN.

### Claim 5 (depends on 1)

The method of claim 1, wherein forming the dielectric layer comprises:
annealing the semiconductor substrate including the first electrode under an oxygen atmosphere; and then
depositing a doped metal layer composed of Nb-doped SrTiO3 over the first electrode under an oxygen atmosphere; and then
annealing the semiconductor substrate including the first electrode and the doped metal layer composed of Nb-doped SrTiO3 under an oxygen atmosphere.

### Claim 6 (depends on 1)

The method of claim 1, wherein the dielectric layer comprises an oxide of a compound comprising Sr and Ti.

### Claim 7

A method comprising:
forming a first metal layer as a first electrode over and contacting a semiconductor substrate; and then
forming an oxide layer under an oxygen atmosphere as a dielectric layer over and contacting the first electrode; and then
forming a second metal layer as a second electrode over and contacting the dielectric layer.

### Claim 8 (depends on 7)

The method of claim 7, wherein the first electrode and the second electrode each comprise TiN.

### Claim 9 (depends on 7)

The method of claim 7, wherein the oxide layer comprises an oxide of at least one of a compound that includes Sr and Ti, a compound that includes La and Mn and a compound that includes Pm and Mn.

### Claim 10 (depends on 9)

The method of claim 9, wherein the oxide layer is a doped oxide layer.

### Claim 10 (depends on 7)

The method of claim 7, wherein the oxide layer is a doped oxide layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the doped oxide layer is doped with at least one of Nb, K and Cr.

### Claim 11 (depends on 10)

The method of claim 10, wherein the doped oxide layer is doped with at least one of Nb, K and Cr.

### Claim 12

A method comprising:
forming a lower electrode comprising a first metal layer over and contacting a semiconductor substrate; and then
performing a thermal treatment on the semiconductor substrate including the lower electrode after forming the lower electrode; and then
forming a doped oxide layer over and contacting the first metal layer after performing the thermal treatment; and then
forming a plurality of upper electrodes comprising a second metal layer over and contacting the doped oxide layer,
wherein the doped oxide layer is formed in an oxygen atmosphere.

### Claim 13 (depends on 12)

The method of claim 12, wherein the first metal layer and the second metal layer comprises titanium nitride (TiN).

### Claim 14 (depends on 13)

The method of claim 13, wherein the doped oxide layer comprises an oxide material of at least one of strontium (Sr), titanium (Ti), lanthanum (La), manganese (Mn) and promethium (Pm).

### Claim 15 (depends on 14)

The method of claim 14, wherein the doped oxide layer is doped with at least one of Niobium (Nb), potassium (K) and chromium (Cr).

### Claim 16 (depends on 12)

The method of claim 12, wherein the doped oxide layer comprises an oxide material of at least one of strontium (Sr), titanium (Ti), lanthanum (La), manganese (Mn) and promethium (Pm).

### Claim 17 (depends on 16)

The method of claim 16, wherein the doped oxide layer is doped with at least one of Niobium (Nb), potassium (K) and chromium (Cr).

### Claim 18 (depends on 12)

The method of claim 12, wherein the doped oxide layer is doped with at least one of Niobium (Nb), potassium (K) and chromium (Cr).

### Claim 19 (depends on 12)

The method of claim 12, wherein the doped oxide layer comprises an oxide of at least one of a compound that includes Sr and Ti, a compound that includes La and Mn and a compound that includes Pm and Mn.

### Claim 20 (depends on 12)

The method of claim 12, wherein the doped oxide layer comprises at least one of Nb-doped SrTiO3, Ca-doped LaMnO3, Ca-doped PrMnO3 (PCMO), and Cr-doped SrTiO3.