# US 2010/0167474 A1 · Methods of Forming Semiconductor-On-Insulating (SOI) Field Effect Transistors with Body Contacts > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0167474 A1 - Document ID: US20100167474A1 - Status: Published application - Kind: A1 - Application number: 12/721,944 - Filed: 2010-03-11 - Published: 2010-07-01 - Earliest claimed: 2004-06-25 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Sung-Young Lee; Dong-suk Shin - Web page: https://patentgrep.com/patent/US20100167474A1 ## CPC - H10D 30/0278: {forming single crystalline channels on wafers after forming insulating device isolations} - H10D 30/0273: {forming final gates or dummy gates after forming source and drain electrodes, e.g. contact first technology} - H10D 30/0275: {forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions} - H10D 30/0323: {comprising monocrystalline silicon} - H10D 30/6708: {for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect} - H10D 30/6744: {Monocrystalline silicon} - H10D 30/6758: {characterised by the insulating substrates} - H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions} - H10D 64/018: {Spacers formed inside holes at the prospective gate locations, e.g. holes left by removing dummy gates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region. ## Claims ### Claim 1 A method of forming a semiconductor-on-insulator (SOI) field effect transistor with body contact, comprising: forming a semiconductor source/drain layer on a bulk semiconductor region; forming a first insulating layer between the semiconductor source/drain layer and the bulk semiconductor region and a second insulating layer at sidewalls of an opening in the semiconductor source/drain layer; selectively etching a portion of the first insulating layer in the opening to expose a portion of the bulk semiconductor region; epitaxially growing a first semiconductor active region from the exposed portion of the bulk semiconductor region; then selectively etching back the second insulating layer to expose sidewall portions of the semiconductor source/drain layer; epitaxially growing a second semiconductor active region that extends on the first semiconductor active region and on the exposed sidewall portions of the semiconductor source/drain layer; and forming an insulated gate electrode on the second semiconductor active region. ### Claim 2 (depends on 1) A method of claim 1, wherein the step of forming the first and second insulating layers comprises: forming a sacrificial layer between the semiconductor source/drain layer and the bulk semiconductor region; selectively etching through the semiconductor source/drain layer to define the opening and expose a portion of the sacrificial layer; selectively etching back the portion of the sacrificial layer to expose an underside surface of the semiconductor source/drain layer and define a gap between the semiconductor source/drain layer and the bulk semiconductor region; and filling the gap with an electrically insulating layer. ### Claim 3 (depends on 2) The method of claim 2, wherein the sacrificial layer is selected from the group consisting of SiGe and CaF2. ### Claim 4 (depends on 2) The method of claim 2, wherein said step of selectively etching through the semiconductor source/drain layer comprises forming an etching mask having an opening therein on the semiconductor source/drain layer; and wherein said step of forming an insulated gate electrode comprises forming a gate electrode spacer layer on the etching mask, selectively etching back a portion of the gate electrode spacer layer to expose a portion of the second semiconductor active region, and thermally oxidizing the exposed portion of the second semiconductor active region to define a gate insulating layer. ### Claim 5 (depends on 4) The method of claim 4, wherein said step of thermally oxidizing the exposed portion of the second semiconductor active region is followed by the steps of: forming a gate electrode layer that extends on the gate insulating layer and on an upper surface of the etching mask; planarizing the gate electrode layer to define a gate electrode in the opening in the etching mask and expose the upper surface of the etching mask; etching back a portion of the etching mask to expose portions of the semiconductor source/drain layer; and implanting source/drain region dopants into the exposed portions of the semiconductor source/drain layer. ### Claim 6 A method of forming a semiconductor-on-insulator (SOI) field effect transistor with body contact, comprising: forming a semiconductor substrate comprising a bulk semiconductor region, a first insulating layer on the bulk semiconductor region, and a semiconductor source/drain layer on the first insulating layer, the semiconductor substrate having an opening which exposes a portion of the bulk semiconductor region, and a second insulating layer at sidewalls of the opening; epitaxially growing a semiconductor active region that extends on the bulk semiconductor region and on exposed sidewall portions of the semiconductor source/drain layer; and forming an insulated gate electrode on the second semiconductor active region. ### Claim 7 (depends on 6) The method of claim 6, wherein the step of epitaxially growing the semiconductor active region comprises: epitaxially growing a first semiconductor active region from the exposed portion of the bulk semiconductor region; and epitaxially growing a second semiconductor active region that extends on the first semiconductor active region and on the exposed sidewall portions of the semiconductor source/drain layer. ### Claim 8 (depends on 7) The method of claim 7, wherein the step of epitaxially growing the semiconductor active region further comprises: selectively etching back the second insulating layer to expose sidewall portions of the semiconductor source/drain layer, between the step of epitaxially growing the first semiconductor active region and the step of epitaxially growing the second semiconductor active region. ### Claim 9 (depends on 6) The method of claim 6, wherein the semiconductor substrate further comprises a sacrificial layer between the bulk semiconductor region and the semiconductor source/drain layer. ### Claim 10 (depends on 9) The method of claim 9, wherein the sacrificial layer is disposed at a same level with the first insulating layer. ### Claim 11 (depends on 9) The method of claim 9, wherein the sacrificial layer is selected from the group consisting of SiGe and CaF2. ### Claim 12 A method of forming a semiconductor-on-insulator (SOI) field effect transistor with body contact, comprising: forming a semiconductor substrate comprising a bulk semiconductor region, a sacrificial layer on the bulk semiconductor region and a semiconductor source/drain layer on the sacrificial layer; selectively etching through the semiconductor source/drain layer to define an opening therein and expose a portion of the sacrificial layer; selectively etching back a portion of the sacrificial layer to expose an underside surface of the semiconductor source/drain layer and define a gap between the semiconductor source/drain layer and the bulk semiconductor region; filling the gap and lining sidewalls of the opening in the semiconductor source/drain layer with an electrically insulating layer; epitaxially growing a semiconductor active region that extends on the bulk semiconductor region and on exposed sidewall portions of the semiconductor source/drain layer; and forming an insulated gate electrode on the second semiconductor active region. ### Claim 13 (depends on 12) The method of claim 12, further comprising: selectively etching a portion of the electrically insulating layer in the opening to expose a portion of the bulk semiconductor region, before the step of epitaxially growing the semiconductor active region. ### Claim 14 (depends on 12) The method of claim 12, wherein the step of epitaxially growing a semiconductor active region comprises: epitaxially growing a first semiconductor active region from the exposed portion of the bulk semiconductor region; then selectively etching back the electrically insulating layer from within the opening in the semiconductor source/drain layer to expose sidewall portions of the semiconductor source/drain layer; and epitaxially growing a second semiconductor active region that extends on the first semiconductor active region and on the exposed sidewall portions of the semiconductor source/drain layer.