# US 2010/0167463 A1 · Method for Fabricating Resistive Memory Device

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- Number: US 2010/0167463 A1
- Document ID: US20100167463A1
- Status: Published application
- Kind: A1
- Application number: 12/486,811
- Filed: 2009-06-18
- Published: 2010-07-01
- Earliest claimed: 2008-12-29
- Assignees: Hynix Semiconductor Inc.
- Inventors: Min-Gyu Sung
- Web page: https://patentgrep.com/patent/US20100167463A1

## CPC

- H10N 70/883: {Oxides or nitrides}
- G11C 11/5685: {using storage elements comprising metal oxide memory material, e.g. perovskites}
- H10N 70/026: {by physical vapor deposition, e.g. sputtering}
- H10N 70/028: {by conversion of electrode material, e.g. oxidation}
- H10N 70/20: Multistable switching devices, e.g. memristors
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/8833: {Binary metal oxides, e.g. TaOx}
- G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A method for fabricating a resistive memory device includes forming a lower electrode including a metal nitride layer over a substrate, forming a metal oxide layer used as a variable resistance material by oxidizing a part of the metal nitride layer, and forming an upper electrode on the metal oxide layer.

## Claims

### Claim 1

A method for fabricating a resistive memory device, the method comprising:
forming a lower electrode including a metal nitride layer over a substrate;
forming a metal oxide layer used as a variable resistance material by oxidizing a part of the metal nitride layer; and
forming an upper electrode on the metal oxide layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the metal nitride layer comprises one selected from a tungsten nitride (WN) layer, a tantalum nitride (TaN) layer, a titanium nitride (TiN) layer, a molybdenum nitride (MoN) layer and a combination thereof.

### Claim 3 (depends on 1)

The method of claim 1, wherein the metal oxide layer comprises one selected from a tungsten oxide (WOx) layer, a tantalum oxide (TaOx) layer, a titanium oxide (TiOx) layer, a molybdenum oxide (MoOx) layer and a combination thereof, x being a positive integer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the oxidation process is performed using an oxygen gas.

### Claim 5

A method for fabricating a resistive memory device, the method comprising:
forming a lower electrode over a substrate;
forming a variable resistance material layer on the lower electrode by supplying an oxygen gas into a chamber where the lower electrode is deposited; and
forming an upper electrode on the variable resistance material layer.

### Claim 6 (depends on 5)

The method of claim 5, wherein forming the lower electrode is performed by employing a physical vapor deposition (PVD) method.

### Claim 7 (depends on 6)

The method of claim 6, wherein forming the variable resistance material layer is performed by employing a reactive sputtering method through the supply of the oxygen gas.

### Claim 8 (depends on 5)

The method of claim 5, wherein the lower electrode comprises a metal layer and the variable resistance material layer comprises a metal oxide layer.

### Claim 9 (depends on 5)

The method of claim 5, wherein the lower electrode comprises a metal nitride layer and the variable resistance material layer comprises a metal oxynitride layer.

### Claim 10 (depends on 5)

The method of claim 5, wherein the upper electrode is formed with the same material as that of the lower electrode.

### Claim 11 (depends on 10)

The method of claim 10, wherein forming the lower electrode, forming the variable resistance material layer and forming the upper electrode are performed in the same chamber.

### Claim 12

A method for fabricating a resistive memory device, the method comprising:
forming a lower electrode over a substrate, wherein the lower electrode includes a material whose oxidation is suppressed in a selective oxidation process;
forming a material layer on the lower electrode, wherein the material layer is prone to being oxidized in the selective oxidation process;
forming a variable resistance material layer by selectively oxidizing the material layer through the selective oxidation process; and
forming an upper electrode on the variable resistance material layer.

### Claim 13 (depends on 12)

The method of claim 12, wherein the lower electrode comprises a tungsten (W) layer, a TiN layer, a molybdenum (Mo) layer or a combination thereof.

### Claim 14 (depends on 12)

The method of claim 12, wherein the material layer comprises a metal layer or a metal nitride layer.

### Claim 15 (depends on 14)

The method of claim 14, wherein the variable resistance material layer comprises a metal oxide layer.

### Claim 16 (depends on 12)

The method of claim 12, wherein the selective oxidation process is performed in a H2 rich oxidation atmosphere.

### Claim 17 (depends on 16)

The method of claim 16, wherein the selective oxidation process is performed in a H2/O2 gas or plasma atmosphere.

### Claim 18 (depends on 16)

The method of claim 16, wherein the selective oxidation process is performed in a H2O/H2 gas or plasma atmosphere.

### Claim 19 (depends on 16)

The method of claim 16, wherein the material layer on the lower electrode is more prone to being oxidized than the lower electrode.