# US 2010/0167453 A1 · Methods of forming an image sensor

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- Number: US 2010/0167453 A1
- Document ID: US20100167453A1
- Status: Published application
- Kind: A1
- Application number: 12/654,636
- Filed: 2009-12-28
- Published: 2010-07-01
- Earliest claimed: 2008-12-26
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Gi Bum Kim; Yun Ki Lee
- Web page: https://patentgrep.com/patent/US20100167453A1

## CPC

- H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12}
- H10F 39/199: {Back-illuminated image sensors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.

## Claims

### Claim 1

A method of forming an image sensor comprising:
providing a single crystalline semiconductor layer including at least one photodiode on a support substrate;
forming a material layer including dopants on the single crystalline semiconductor layer; and
forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
an insulating layer on the support substrate; and
at least one interconnection line in the insulating layer,
wherein the single crystalline semiconductor layer is on the insulating layer.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
forming a diffusion control layer between the single crystalline semiconductor layer and the insulating layer.

### Claim 4 (depends on 3)

The method of claim 3, wherein forming the diffusion control layer includes oxidizing a portion of the single crystalline semiconductor layer.

### Claim 5 (depends on 4)

The method of claim 4, wherein oxidizing the portion of the single crystalline semiconductor layer includes performing a wet oxidation process.

### Claim 6 (depends on 5)

The method of claim 5, wherein performing the wet oxidation process includes treating a surface of the single crystalline semiconductor layer with an oxidation solution to oxidize a portion of the single crystalline semiconductor layer.

### Claim 7 (depends on 6)

The method of claim 6, wherein the oxidation solution is made of at least one of hydrochloric acid, hydrogen peroxide and ammonia water diluted with water.

### Claim 8 (depends on 6)

The method of claim 6, wherein the oxidation solution is deionized water including ozone dissolved therein.

### Claim 9 (depends on 3)

The method of claim 3, wherein the diffusion control layer is made of a different material from the single crystalline semiconductor layer or a material having a different crystalline structure from the single crystalline semiconductor layer.

### Claim 10 (depends on 3)

The method of claim 3, further comprising:
removing the diffusion control layer in order to expose the single crystalline semiconductor layer;
forming at least one color filter on the single crystalline semiconductor layer; and
forming at least one micro lens on the at least one color filter.

### Claim 11 (depends on 10)

The method of claim 10, wherein the at least one color filter corresponds with the at least one photodiode.

### Claim 12 (depends on 10)

The method of claim 10, wherein the at least one color filter is formed of a dyed photoresist.

### Claim 13 (depends on 10)

The method of claim 10, wherein the at least one micro lens, the at least one photo diode, and the at least one color filter constitute one pixel.

### Claim 14 (depends on 1)

The method of claim 1, wherein diffusing the dopants includes irradiating a laser into the material layer.

### Claim 15 (depends on 1)

The method of claim 1, wherein the material layer includes a semiconductor element of an amorphous state.

### Claim 16 (depends on 1)

The method of claim 1, wherein the dopants are p-type.

### Claim 17 (depends on 1)

The method of claim 1, wherein the single crystalline semiconductor layer is doped with dopants of a first conductivity type, the at least one photodiode is doped with dopants of a second conductivity type, and wherein a concentration of the dopants in the dopant diffusion layer is higher than a concentration of the dopants in the single crystalline semiconductor layer.

### Claim 18 (depends on 1)

The method of claim 1, wherein the at least one photodiode is spaced apart from the dopant diffusion layer.