# US 2010/0167449 A1 · Solid-state imaging device and method of manufacturing the same

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- Number: US 2010/0167449 A1
- Document ID: US20100167449A1
- Status: Published application
- Kind: A1
- Application number: 12/720,196
- Filed: 2010-03-09
- Published: 2010-07-01
- Earliest claimed: 2004-05-31
- Assignees: Sony Corporation
- Inventors: Ikuo Yoshihara
- Web page: https://patentgrep.com/patent/US20100167449A1

## CPC

- H10F 39/807: {Pixel isolation structures}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/026: {Wafer-level processing}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/182: {Colour image sensors}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 77/147: {Shapes of bodies}
- Y02E 10/50: Photovoltaic [PV] energy
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.

## Claims

### Claim 1

A method of manufacturing a solid-state imaging device having a pixel formation region including a pixel made of a photoelectric conversion element, said method comprising the steps of:
forming an element isolation insulating layer in an element isolation portion of said pixel formation region; and
forming an impurity element isolation region in said element isolation portion within said semiconductor substrate.

### Claim 2 (depends on 1)

A method of manufacturing a solid-state imaging device according to claim 1, wherein said element isolation layer is formed before said impurity element isolation region is formed.

### Claim 3 (depends on 2)

A method of manufacturing a solid-state imaging device according to claim 2, wherein said device includes a selection transistor in said pixel formation region and configured to read out a signal charge from said photoelectric conversion element; and said method further comprises:
burying insulating material into a trench formed by a depth of a gate insulating layer of said selection transistor or a surface of said semiconductor substrate in said step of forming said element isolation insulating layer.

### Claim 4 (depends on 3)

A method of manufacturing a solid-state imaging device according to claim 3, wherein said step of forming an impurity element isolation region is a step of self-aligned implanting from a top of said element isolation insulating layer.

### Claim 5 (depends on 4)

A method of manufacturing a solid-state imaging device according to claim 4, wherein a photoelectric conversion element comprises a first conductive type impurity region and a second conductive type impurity region under said first conductive type impurity region, and said method further comprises the step of forming another second conductive type impurity region on said photoelectric conversion element and electrically connecting said impurity element isolation region to said another second conductive type impurity region.

### Claim 6 (depends on 5)

A method of manufacturing a solid-state imaging device according to claim 5, wherein forming said another second conductive type impurity region is a different step from said step of forming an impurity element isolation region.