# US 2010/0167445 A1 · Method for manufacturing back side illumination image sensor

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2010/0167445 A1
- Document ID: US20100167445A1
- Status: Published application
- Kind: A1
- Application number: 12/641,986
- Filed: 2009-12-18
- Published: 2010-07-01
- Earliest claimed: 2008-12-31
- Assignees: Dongbu HiTek Co., Ltd.
- Inventors: YONG GEUN LEE
- Web page: https://patentgrep.com/patent/US20100167445A1

## CPC

- H10F 39/016: {of thin-film-based image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F 39/807: {Pixel isolation structures}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Disclosed is a method for manufacturing a back side illumination image sensor. The method includes defining a pixel area by forming a first isolation area in a first substrate; forming a photo detecting unit buried in the pixel area; forming an ion implantation layer on the photo detecting unit; growing a second substrate on the first substrate having the ion implantation layer; forming a logic unit electrically connected to the first substrate on the second substrate; forming an insulting layer and an interconnection on the second substrate; and exposing the photo detecting unit by grinding a backside of the first substrate.

## Claims

### Claim 1

A method for manufacturing a back side illumination image sensor, the method comprising:
defining a pixel area by forming a first isolation area in a first substrate;
forming a photo detecting unit buried in the pixel area;
forming an ion implantation layer on the photo detecting unit;
growing a second substrate on the first substrate having the ion implantation layer;
forming a logic unit electrically connected to the first substrate on the second substrate;
forming an insulting layer and an interconnection on the second substrate; and
exposing the photo detecting unit by grinding a backside of the first substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the photo detecting unit buried in the pixel area includes forming a bottom surface of the photo detecting unit in line with a bottom surface of the first isolation area.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first substrate is P-type, and wherein the forming of the photo detecting unit buried in the pixel area includes implanting N-type ions into the P-type first substrate.

### Claim 4 (depends on 3)

The method of claim 3, wherein the forming of the ion implantation layer on the photo detecting unit includes implanting P-type ions into the first substrate on the photo detecting unit.

### Claim 5 (depends on 1)

The method of claim 1, wherein the growing of the second substrate on the first substrate having the ion implantation layer includes growing an epitaxial silicon layer on the first substrate.

### Claim 6 (depends on 1)

The method of claim 1, wherein the forming of the logic unit electrically connected to the first substrate on the second substrate includes:
forming a second isolation area in the second substrate; and
forming a transistor including a gate and a source/drain in each active area defined by the second isolation area.

### Claim 7

A method for manufacturing a back side illumination image sensor, the method comprising:
defining a pixel area by forming a first isolation area in a first substrate;
forming a photo detecting unit buried in the pixel area at a depth corresponding to a depth of the first isolation area;
forming an ion implantation layer in a region ranging from a top surface of the photo detecting unit to a top surface of the first substrate by implanting ions into the pixel area remaining over the photo detecting unit;
growing an epitaxial silicon layer on the first substrate having the ion implantation layer;
forming a transistor electrically connected to the photo detecting unit on the epitaxial silicon layer;
forming an insulting layer and an interconnection on the epitaxial silicon layer having the transistor; and
exposing the photo detecting unit by grinding a backside of the first substrate.

### Claim 8 (depends on 7)

The method of claim 7, wherein the first substrate is P-type, and wherein the forming of the photo detecting unit buried in the pixel area includes implanting N-type ions into the P-type first substrate.

### Claim 9 (depends on 7)

The method of claim 7, wherein the forming of the ion implantation layer includes implanting P-type ions into the first substrate above the photo detecting unit.