# US 2010/0167443 A1 · Active matrix substrate, method of making the substrate, and display device

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- Number: US 2010/0167443 A1
- Document ID: US20100167443A1
- Status: Published application
- Kind: A1
- Application number: 12/658,555
- Filed: 2010-02-11
- Published: 2010-07-01
- Earliest claimed: 2000-08-28
- Assignees: Sharp Kabushiki Kaisha
- Inventors: Yoshihiro Okada; Yuichi Saito; Shinya Yamakawa; Atsushi Ban; Masaya Okamoto; Hiroyuki Ohgami
- Web page: https://patentgrep.com/patent/US20100167443A1

## CPC

- H10D 30/6758: {characterised by the insulating substrates}
- G02F 1/1362: Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)}
- H10D 30/019: {of FETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 30/0316: {of lateral bottom-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

## Claims

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### Claim 43

A method of making an active matrix substrate, comprising the steps of:
a) depositing a semiconductor film over a base substrate;
b) depositing a first conductive film over the semiconductor film;
c) patterning the first conductive and semiconductor films, thereby forming a plurality of data lines, a plurality of pixel electrodes and a plurality of conductive members so that parts of the semiconductor film, located between each said data line and associated ones of the conductive members, are not removed but left, wherein each said conductive member extends from associated one of the pixel electrodes along associated one of the data lines;
d) depositing an insulating film over the base substrate;
e) depositing a second conductive film over the insulating film; and
f) patterning the second conductive film, thereby forming a plurality of gate lines, which cross the data lines, the pixel electrodes and the conductive members, and etching away the parts of the semiconductor film located between each said data line and the associated conductive members entirely except some of the parts of the semiconductor film that are located under the gate lines.

### Claim 44 (depends on 43)

The method of claim 43, wherein the step c) comprises:
defining a resist mask, which includes: relatively thick portions that will define the data lines, the pixel electrodes and the conductive members; and relatively thin portions, each of which will define a region between associated one of the data lines and associated ones of the conductive members;
etching away parts of the first conductive and semiconductor films that are not covered with the resist mask;
removing the relatively thin portions from the resist mask; and
etching away other parts of the first conductive film, which have been covered with the relatively thin portions of the resist mask.

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