# US 2010/0167434 A1 · Method for fabricating light emitting diode chip

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2010/0167434 A1
- Document ID: US20100167434A1
- Status: Published application
- Kind: A1
- Application number: 12/398,165
- Filed: 2009-03-04
- Published: 2010-07-01
- Earliest claimed: 2008-12-26
- Assignees: Lextar Electronics Corporation
- Inventors: Kuo-Lung Fang; Chien-Sen Weng; Chih-Wei Chao
- Web page: https://patentgrep.com/patent/US20100167434A1

## CPC

- H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/8312: {extending at least partially through the bodies}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

## Claims

### Claim 1

A method of fabricating a light emitting diode chip, comprising:
forming a semiconductor device layer on a substrate;
forming a current spreading layer on a portion of the semiconductor device layer;
forming a current blocking layer and a passivation layer on a portion of the semiconductor device layer not covered by the current spreading layer;
forming a first electrode on the current blocking layer and the current spreading layer; and
forming a second electrode on the semiconductor device layer.

### Claim 2 (depends on 1)

The method of fabricating the light emitting diode chip as claimed in claim 1, wherein the method of forming the semiconductor device layer comprises:
forming a semiconductor layer on the substrate; and
patterning the semiconductor layer to form the semiconductor device layer.

### Claim 3 (depends on 1)

The method of fabricating the light emitting diode chip as claimed in claim 1, wherein the method of forming the semiconductor device layer comprises:
forming a first type semiconductor material layer, a light emitting material layer, and a second type semiconductor material layer sequentially on the substrate; and
patterning the second type semiconductor material layer, the light emitting material layer, and the first type semiconductor material layer to form a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, wherein the light emitting layer is disposed on a portion of the first type semiconductor layer, and the second type semiconductor layer is disposed on the light emitting layer.

### Claim 4 (depends on 3)

The method of fabricating the light emitting diode chip as claimed in claim 3, wherein the method of forming the current spreading layer comprises:
forming a conductive layer on the second type semiconductor layer; and
patterning the conductive layer to form the current spreading layer.

### Claim 5 (depends on 4)

The method of fabricating the light emitting diode chip as claimed in claim 4, wherein the current spreading layer has an opening to expose an upper surface of the second type semiconductor layer, and the current blocking layer contacts with the upper surface of the second type semiconductor layer through the opening.

### Claim 6 (depends on 5)

The method of fabricating the light emitting diode chip as claimed in claim 5, wherein a contact area of the current blocking layer and the second type semiconductor layer substantially equals to a bottom area of the opening.

### Claim 7 (depends on 5)

The method of fabricating the light emitting diode chip as claimed in claim 5, wherein the contact area of the current blocking layer and the second type semiconductor layer is substantially smaller than the bottom area of the opening.

### Claim 8 (depends on 7)

The method of fabricating the light emitting diode chip as claimed as claim 7, wherein a portion of the second type semiconductor layer exposed by the opening but not covered by the current blocking layer, is electrically connected to the first electrode.

### Claim 9 (depends on 1)

The method of fabricating the light emitting diode chip as claimed in claim 1, wherein the method of forming the current blocking layer and the passivation layer comprises:
forming a dielectric layer on a portion of the semiconductor device layer not covered by the current spreading layer; and
patterning the dielectric layer to form the current blocking layer and the passivation layer simultaneously.

### Claim 10 (depends on 9)

The method of fabricating the light emitting diode chip as claimed in claim 9, wherein a material of the dielectric layer comprises a silicon carbide based material.

### Claim 11 (depends on 10)

The method of fabricating the light emitting diode chip as claimed in claim 10, wherein the silicon carbide based material comprises SiOxCy: H, SiC, SiCxNy, or SiOxCyNz.

### Claim 12 (depends on 9)

The method of fabricating the light emitting diode chip as claimed in claim 9, wherein a material of the dielectric layer comprises silicon oxide, silicon nitride, or silicon oxynitride.

### Claim 13

A method of fabricating a light emitting diode chip, comprising:
forming a semiconductor device layer on a substrate;
forming a current blocking layer and a passivation layer on a portion of the semiconductor device layer;
removing a portion of the semiconductor device layer not covered by the current blocking layer and the passivation layer to form a plurality of identification recesses on the semiconductor device layer;
forming a current spreading layer on the current blocking layer and a portion of the semiconductor device layer;
forming a first electrode on the current spreading layer; and
forming a second electrode on the semiconductor device layer.

### Claim 14 (depends on 13)

The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the semiconductor device layer comprises:
forming a semiconductor layer on the substrate; and
patterning the semiconductor layer to form the semiconductor device layer.

### Claim 15 (depends on 13)

The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the semiconductor device layer comprises:
forming a first type semiconductor material layer, a light emitting material layer, and a second type semiconductor material layer sequentially on the substrate; and
patterning the second type semiconductor material layer, the light emitting material layer, and the first type semiconductor material layer to form a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, wherein the light emitting layer is disposed on a portion of the first type semiconductor layer, and the second type semiconductor layer is disposed on the light emitting layer.

### Claim 16 (depends on 13)

The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the current blocking layer and the passivation layer comprises:
forming a dielectric layer on the semiconductor device layer; and
patterning the dielectric layer to form the current blocking layer and the passivation layer simultaneously.

### Claim 17 (depends on 16)

The method of fabricating the light emitting diode chip as claimed in claim 16, wherein a material of the dielectric layer comprises a silicon carbide based material.

### Claim 18 (depends on 17)

The method of fabricating the light emitting diode chip as claimed in claim 17, wherein the silicon carbide based material comprises SiOxCy: H, SiC, SiCxNy, or SiOxCyNz.

### Claim 19 (depends on 16)

The method of fabricating the light emitting diode chip as claimed in claim 16, wherein a material of the dielectric layer comprises silicon oxide, silicon nitride, or silicon oxynitride.

### Claim 20 (depends on 13)

The method of fabricating the light emitting diode chip as claimed in claim 13, wherein the method of forming the plurality of identification recesses comprises etching.

### Claim 21 (depends on 15)

The method of fabricating the light emitting diode chip as claimed in claim 15, wherein the method of forming the current spreading layer comprises:
forming a conductive layer on the second type semiconductor layer and the current blocking layer; and
patterning the conductive layer to form the current spreading layer.

### Claim 22 (depends on 21)

The method of fabricating the light emitting diode chip as claimed in claim 21, wherein the current spreading layer has an opening to expose an upper surface of the current blocking layer, and the first electrode contacts with the upper surface of the current blocking layer through the opening.

### Claim 23

A method of fabricating a light emitting diode chip, comprising:
forming a semiconductor device layer on a substrate;
forming a patterned functional layer with multi-layer structure simultaneously on a portion of the semiconductor device layer;
forming a current spreading layer on a portion of the patterned functional layer and a portion of the semiconductor device layer;
forming a first electrode on the current spreading layer; and
forming a second electrode on the semiconductor device layer.

### Claim 24 (depends on 23)

The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the semiconductor device layer comprises:
forming a semiconductor layer on the substrate; and
patterning the semiconductor layer to form the semiconductor device layer.

### Claim 25 (depends on 23)

The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the semiconductor device layer comprises:
forming a first type semiconductor material layer, a light emitting material layer, and a second type semiconductor material layer sequentially on the substrate; and
patterning the second type semiconductor material layer, the light emitting material layer, and the first type semiconductor material layer to form a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, wherein the light emitting layer is disposed on a portion of the first type semiconductor layer, and the second type semiconductor layer is disposed on the light emitting layer.

### Claim 26 (depends on 23)

The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:
forming a first dielectric layer on the semiconductor device layer;
forming an alignment identification layer on the first dielectric layer; and
patterning the first dielectric layer and the alignment identification layer to form a current blocking layer and a passivation layer simultaneously.

### Claim 27 (depends on 23)

The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:
forming a first dielectric layer on the semiconductor device layer;
forming an alignment identification layer on the first dielectric layer; and
patterning the first dielectric layer and the alignment identification layer to simultaneously form a current blocking layer, a passivation layer, and an isolating trench disposed within the passivation layer.

### Claim 28 (depends on 23)

The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:
forming a first dielectric layer on the semiconductor device layer;
forming an alignment identification layer on the first dielectric layer;
forming a second dielectric layer on the alignment identification layer; and
patterning the first dielectric layer, the alignment identification layer, and the second dielectric layer to form a current blocking layer and a passivation layer simultaneously.

### Claim 29 (depends on 23)

The method of fabricating the light emitting diode chip as claimed in claim 23, wherein the method of forming the patterned functional layer comprises:
forming a first dielectric layer on the semiconductor device layer;
forming an alignment identification layer on the first dielectric layer;
forming a second dielectric layer on the alignment identification layer; and
patterning the first dielectric layer, the alignment identification layer, and the second dielectric layer to simultaneously form a current blocking layer, a passivation layer, and an isolating trench disposed within the passivation layer.

### Claim 30 (depends on 26)

The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

### Claim 31 (depends on 30)

The method of fabricating the light emitting diode chip as claimed in claim 30, wherein the silicon carbide based material comprises SiOxCy: H, SiC, SiCxNy, or SiOxCyNz.

### Claim 32 (depends on 27)

The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

### Claim 33 (depends on 28)

The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

### Claim 34 (depends on 29)

The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein a material of the first dielectric layer or the second dielectric layer comprises a silicon carbide based material.

### Claim 35 (depends on 26)

The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

### Claim 36 (depends on 27)

The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

### Claim 37 (depends on 28)

The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

### Claim 38 (depends on 29)

The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein a material of the first dielectric layer or the second dielectric layer comprises silicon oxide or silicon nitride.

### Claim 39 (depends on 26)

The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein a material of the alignment identification layer comprises a metal.

### Claim 40 (depends on 27)

The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein a material of the alignment identification layer comprises a metal.

### Claim 41 (depends on 28)

The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein a material of the alignment identification layer comprises a metal.

### Claim 42 (depends on 29)

The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein a material of the alignment identification layer comprises a metal.

### Claim 43 (depends on 26)

The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein the method of forming the current spreading layer comprises:
forming a conductive layer on the second type semiconductor layer and the current blocking layer; and
patterning the conductive layer to form the current spreading layer.

### Claim 44 (depends on 27)

The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein the method of forming the current spreading layer comprises:
forming a conductive layer on the second type semiconductor layer and the current blocking layer; and
patterning the conductive layer to form the current spreading layer.

### Claim 45 (depends on 28)

The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein the method of forming the current spreading layer comprises:
forming a conductive layer on the second type semiconductor layer and the current blocking layer; and
patterning the conductive layer to form the current spreading layer.

### Claim 46 (depends on 29)

The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein the method of forming the current spreading layer comprises:
forming a conductive layer on the second type semiconductor layer and the current blocking layer; and
patterning the conductive layer to form the current spreading layer.

### Claim 47 (depends on 26)

The method of fabricating the light emitting diode chip as claimed in any of the claim 26, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.

### Claim 48 (depends on 27)

The method of fabricating the light emitting diode chip as claimed in any of the claim 27, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.

### Claim 49 (depends on 28)

The method of fabricating the light emitting diode chip as claimed in any of the claim 28, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.

### Claim 50 (depends on 29)

The method of fabricating the light emitting diode chip as claimed in any of the claim 29, wherein the current blocking layer has an opening to expose an upper surface of the second type semiconductor layer, and the current spreading layer contacts with the upper surface of the second type semiconductor layer through the opening.