# US 2010/0167429 A1 · Method of manufacturing semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2010/0167429 A1
- Document ID: US20100167429A1
- Status: Published application
- Kind: A1
- Application number: 12/643,026
- Filed: 2009-12-21
- Published: 2010-07-01
- Earliest claimed: 2008-12-31
- Inventors: Seong-Hun Jeong
- Web page: https://patentgrep.com/patent/US20100167429A1

## CPC

- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a semiconductor device estimates the level of erosion generated in CMP of a plug by using a monitoring pattern that defines uniformly a hole array size (split a) and the length (split b) of the space between arrays.

## Claims

### Claim 1

A method of manufacturing a semiconductor device comprising:
estimating a level of erosion generated in a chemical mechanical polishing of a plug using a monitoring pattern that uniformly defines a hole array size and a length of the space between arrays.

### Claim 2 (depends on 1)

The method of claim 1, wherein influence of the hole array size increases in accordance with the hole array size.

### Claim 3 (depends on 2)

The method of claim 2, wherein the level of erosion is monitored whether to be saturated in a predetermined size.

### Claim 4 (depends on 1)

The method of claim 1, wherein erosion is generated in inverse proportion to the space between arrays.

### Claim 5 (depends on 4)

The method of claim 4, wherein the length of the space between arrays that is influenced therebetween is monitored.

### Claim 6 (depends on 4)

The method of claim 4, wherein influence of the hole array size increases in accordance with the hole array size.

### Claim 7 (depends on 6)

The method of claim 6, wherein the level of erosion is monitored whether to be saturated in a predetermined size.

### Claim 8 (depends on 2)

The method of claim 2, wherein erosion is generated in inverse proportion to the space between arrays.

### Claim 9 (depends on 8)

The method of claim 8, wherein the length of the space that is influenced between the arrays is monitored.

### Claim 10

A method of manufacturing a semiconductor device comprising:
forming a hole in a layer;
filling the hole with a metal material;
forming a plug by conducting a chemical mechanical polishing process on the metal material; and then estimating a level of erosion generated during the chemical mechanical polishing process.

### Claim 11 (depends on 10)

The method of claim 10, wherein estimating the level of erosion comprises performing a monitoring using a monitoring pattern that uniformly defines a hole array size and a length of the space between arrays.

### Claim 12 (depends on 11)

The method of claim 11, wherein influence of the hole array size increases in accordance with the hole array size.

### Claim 13 (depends on 12)

The method of claim 12, wherein the level of erosion is monitored whether to be saturated in a predetermined size.

### Claim 14 (depends on 10)

The method of claim 10, wherein the metal material comprises tungsten.

### Claim 15 (depends on 11)

The method of claim 11, wherein erosion is generated in inverse proportion to the space between arrays.

### Claim 16 (depends on 15)

The method of claim 15, wherein performing the monitoring comprises monitoring the length of the space between arrays that is influenced therebetween.

### Claim 17

A method of manufacturing a semiconductor device comprising:
forming a plug by conducting a chemical mechanical polishing process on a material comprising tungsten;
estimating a level of erosion generated during the chemical mechanical polishing process by a monitoring process that uses a monitoring pattern that uniformly defines a hole array size and a length of the space between arrays.

### Claim 18 (depends on 10)

The method of claim 10, wherein influence of the hole array size increases in accordance with the hole array size.

### Claim 19 (depends on 18)

The method of claim 18, wherein the level of erosion is monitored whether to be saturated in a predetermined size.

### Claim 20 (depends on 10)

The method of claim 10, wherein erosion is generated in inverse proportion to the space between arrays.