# US 2010/0167201 A1 · Resist composition for negative tone development and pattern forming method using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0167201 A1 - Document ID: US20100167201A1 - Status: Published application - Kind: A1 - Application number: 12/664,117 - Filed: 2008-06-12 - Published: 2010-07-01 - Earliest claimed: 2007-06-12 - Assignees: FUJIFILM Corporation - Inventors: Hideaki Tsubaki - Web page: https://patentgrep.com/patent/US20100167201A1 ## CPC - G03F 7/30: Imagewise removal using liquid means - G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors} - G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition} - G03F 7/325: {Non-aqueous compositions} - C08F 220/24: containing perhaloalkyl radicals - C08F 220/286: {and containing polyethylene oxide in the alcohol moiety, e.g. methoxy polyethylene glycol (meth)acrylate} - Y10S 430/106: Binder containing - Y10S 430/108: Polyolefin or halogen containing - Y10S 430/111: Polymer of unsaturated acid or ester - Y10S 430/122: Sulfur compound containing - Y10S 430/123: Sulfur in heterocyclic ring - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same. A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of −4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same. ## Claims ### Claim 1 A resist composition for negative tone development, comprising: (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to increase a solubility of the resin (A) in a positive tone developer and decrease a solubility of the resin (A) in a negative tone developer; (B) a compound capable of generating an acid having an acid dissociation index pKa of −4.0 or less upon irradiation with an actinic ray or radiation; and (C) a solvent. ### Claim 2 (depends on 1) The resist composition for negative tone development according to claim 1, wherein (B) the compound capable of generating an acid having an acid dissociation index pKa of −4.0 or less upon irradiation with an actinic ray or radiation is a compound capable of generating an acid represented by the following formula (P-1): wherein each of Rc1 and Rc2 independently represents an organic group, and Rc1 and Rc2 may combine with each other to form a ring. ### Claim 3 (canceled) ### Claim 4 (canceled) ### Claim 5 (canceled) ### Claim 6 (depends on 1) The resist composition for negative tone development according to claim 1, wherein the negative tone developer contains an organic solvent. ### Claim 7 (depends on 6) The resist composition for negative tone development according claim 6, where the organic solvent contained in the negative tone developer is at least one solvent selected from the group consisting of ketone-based solvent, ester-based solvent, alcohol-based solvent, amide-based solvent, ether-based solvent and hydrocarbon-based solvent. ### Claim 8 (depends on 7) The resist composition for negative tone development according to claim 7, wherein the organic solvent contained in the negative tone developer is ester-based solvent. ### Claim 9 (depends on 8) The resist composition for negative tone development according to claim 8, wherein the ester-based solvent is butyl acetate or isoamyl acetate. ### Claim 10 (depends on 6) The resist composition for negative tone development according to claim 6, wherein the negative tone development is performed using a negative tone developer containing at least one kind of a solvent selected from the group consisting of organic solvents having a vapor pressure at 20° C. of 5 kPa or less. ### Claim 11 (depends on 2) The resist composition for negative tone development according to claim 2, wherein each of the Rc1 and Rc2 independently represents an alkyl group with at least the 1-position of the alkyl group being substituted by a fluorine atom or a fluoroalkyl group, or a phenyl group substituted by a fluorine atom, a fluoroalkyl group or a nitro group. ### Claim 12 (depends on 2) The resist composition for negative tone development according to claim 2, where in Rc1 and Rc2 are combined with each other to form a ring. ### Claim 13 A pattern forming method, comprising: (i) a step of applying a resist composition for negative tone development, which contains (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to increase a solubility of the resin (A) in a positive tone developer and decrease a solubility of the resin (A) in a negative tone developer, (B) a compound capable of generating an acid represented by the following formula (P-1) upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) an exposure step; and (iv) a step of performing development by using a negative tone developer: wherein each of Rc1 and Rc2 independently represents an organic group, and Rc1 and Rc2 may combine with each other to form a ring. ### Claim 14 (depends on 13) The pattern forming method according to claim 13, further comprising: (iii) a step of performing development by using a positive tone developer. ### Claim 15 (depends on 13) The pattern forming method according to claim 13, wherein the negative tone developer contains an organic solvent. ### Claim 16 (depends on 15) The pattern forming method according to claim 15, wherein the organic solvent contained in the negative tone developer is at least one solvent selected from the group consisting of ketone-based solvent, ester-based solvent, alcohol-based solvent, amide-based solvent, ether-based solvent and hydrocarbon-based solvent. ### Claim 17 (depends on 16) The pattern forming method according to claim 16, wherein the organic solvent contained in the negative tone developer is ester-based solvent. ### Claim 18 (depends on 17) The pattern forming method according to claim 17, wherein the ester-based solvent is butyl acetate or isoamyl acetate. ### Claim 19 (depends on 15) The pattern forming method according to claim 15, the negative tone developer contains at least one kind of a solvent selected from the group consisting of organic solvents having a vapor pressure at 20° C. of 5 kPa or less. ### Claim 20 (depends on 13) The pattern forming method according to claim 13, wherein each of Rc1 and Rc2 independently represents an alkyl group with at least the 1-position of the allyl group being substituted by a fluorine atom or a fluoroalkyl group, or a phenyl group substituted by a fluorine atom, a fluoroalkyl group or a nitro group. ### Claim 21 (depends on 13) The pattern forming method according to claim 13, wherein Rc1 and Rc2, are combined with each other to form a ring.