# US 2010/0167031 A1 · Substrate structures applied in flexible electrical devices and fabrication method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0167031 A1 - Document ID: US20100167031A1 - Status: Published application - Kind: A1 - Application number: 12/628,785 - Filed: 2009-12-01 - Published: 2010-07-01 - Earliest claimed: 2008-12-30 - Assignees: Industrial Technology Research Institute - Inventors: Chyi-Ming LEU; Yueh-Chuan HUANG; Yung Lung TSENG - Web page: https://patentgrep.com/patent/US20100167031A1 ## CPC - B32B 27/32: comprising polyolefins {(comprising vinyl (co)polymers or acrylic (co)polymers B32B27/30)} - B32B 3/04: characterised by {at least one} layer folded at the edge, e.g. over another layer {; characterised by at least one layer enveloping or enclosing a material} - B32B 15/08: of synthetic resin - B32B 27/08: of synthetic resin - B32B 27/281: {comprising polyimides} - B32B 27/283: {comprising polysiloxanes} - B32B 27/286: {comprising polysulphones; polysulfides} - B32B 27/308: {comprising acrylic (co)polymers} - B32B 27/36: comprising polyesters - B32B 27/365: {comprising polycarbonates} - B32B 2255/10: on synthetic resin layer or on natural or synthetic rubber layer - B32B 2255/205: Metallic coating - B32B 2255/26: Polymeric coating - B32B 2255/28: Multiple coating on one surface - B32B 2307/748: Releasability - B32B 2457/00: Electrical equipment - H10D 30/6758: {characterised by the insulating substrates} - H10D 86/411: {characterised by materials, geometry or structure of the substrates} - H10D 86/60: wherein the TFTs are in active matrices - Y10T 428/24942: including components having same physical characteristic in differing degree - B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A substrate structure applied in flexible electrical devices is provided. The substrate structure includes a carrier, a first material layer overlying the carrier with a first area, a second material layer overlying the first material layer and the carrier with a second area, and a flexible substrate overlying the second material layer, the first material layer and the carrier with a third area, wherein the second area is larger than or equal to the first area, the third area is larger than the second area, and the flexible substrate has a greater adhesion force than that of the first material layer to the carrier. The invention also provides a method for fabricating the substrate structure. ## Claims ### Claim 1 A substrate structure applied in flexible electrical devices, comprising: a carrier; a first material layer overlying the carrier with a first area; a second material layer overlying the first material layer and the carrier with a second area, wherein the second area is larger than or equal to the first area; and a flexible substrate overlying the second material layer, the first material layer and the carrier with a third area, wherein the third area is larger than the second area and the flexible substrate has a greater adhesion force than that of the first material layer to the carrier. ### Claim 2 (depends on 1) The substrate structure applied in flexible electrical devices as claimed in claim 1, wherein the carrier comprises glass or silicon wafer. ### Claim 3 (depends on 1) The substrate structure applied in flexible electrical devices as claimed in claim 1, wherein the adhesion force of the first material layer to the carrier is 0-1 B. ### Claim 4 (depends on 1) The substrate structure applied in flexible electrical devices as claimed in claim 1, wherein the first material layer comprises parylene or cyclic olefin copolymers (COC). ### Claim 5 (depends on 1) The substrate structure applied in flexible electrical devices as claimed in claim 1, wherein the second material layer comprises inorganic oxides, inorganic nitrides or metals. ### Claim 6 (depends on 5) The substrate structure applied in flexible electrical devices as claimed in claim 5, wherein the second material layer comprises aluminum oxide or silicon oxide. ### Claim 7 (depends on 5) The substrate structure applied in flexible electrical devices as claimed in claim 5, wherein the second material layer comprises silicon nitride. ### Claim 8 (depends on 1) The substrate structure applied in flexible electrical devices as claimed in claim 1, wherein the second material layer has thickness of 50-1,000 nm. ### Claim 9 (depends on 1) The substrate structure applied in flexible electrical devices as claimed in claim 1, wherein the adhesion force of the flexible substrate to the carrier is 1-5 B. ### Claim 10 (depends on 1) The substrate structure applied in flexible electrical devices as claimed in claim 1, wherein the flexible substrate comprises polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyacrylate (PA), polynorbornene (PNB), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or polyetherimide (PEI). ### Claim 11 (depends on 10) The substrate structure applied in flexible electrical devices as claimed in claim 10, wherein the polyimide (PI) has Formula (I): wherein A comprises wherein X and Y comprise hydrogen, methyl, trifluoromethyl, hydroxyl, —OR, bromine, chlorine or iodine, and Z comprises —O—, —CH2-, —C(CH3)2-, —SO2-, —Ar—O—Ar—, —Ar—CH2-Ar—, —Ar—C(CH3)2-Ar— or —Ar—SO2-Ar—, wherein R comprises C1-18 alkyl, and Ar is benzene; B comprises wherein X and Y comprise hydrogen, methyl, trifluoromethyl, hydroxyl, —OR, bromine, chlorine or iodine, and Z comprises —O—, —CH2-, —C(CH3)2-, —SO2-, —Ar—O—Ar—, —Ar—CH2-Ar—, —Ar—C(CH3)2-Ar— or —Ar—SO2-Ar—, wherein R comprises C1-18 alkyl, and Ar is benzene; and n is an integer greater than 1. ### Claim 12 (depends on 10) The substrate structure applied in flexible electrical devices as claimed in claim 10, wherein the flexible substrate further comprises siloxane compounds. ### Claim 13 (depends on 12) The substrate structure applied in flexible electrical devices as claimed in claim 12, wherein the flexible substrate further comprises silicon oxide. ### Claim 14 A method for fabricating a substrate structure applied in flexible electrical devices, comprising: providing a carrier; forming a first material layer on the carrier with a first area; forming a second material layer on the first material layer and the carrier with a second area, wherein the second area is larger than or equal to the first area; and forming a flexible substrate on the second material layer, the first material layer and the carrier with a third area, wherein the third area is larger than the second area and the flexible substrate has a greater adhesion force than that of the first material layer to the carrier. ### Claim 15 (depends on 14) The method for fabricating a substrate structure applied in flexible electrical devices as claimed in claim 14, wherein the first material layer is formed on the carrier by coating or evaporation. ### Claim 16 (depends on 14) The method for fabricating a substrate structure applied in flexible electrical devices as claimed in claim 14, wherein the flexible substrate is formed on the second material layer, the first material layer and the carrier by coating. ### Claim 17 (depends on 14) The method for fabricating a substrate structure applied in flexible electrical devices as claimed in claim 14, further comprising cutting a portion of the flexible substrate and the carrier along two ends or internal sides of the first material layer to separate the first material layer, the flexible substrate and the carrier.