# US 2010/0167015 A1 · Etching resist

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- Number: US 2010/0167015 A1
- Document ID: US20100167015A1
- Status: Published application
- Kind: A1
- Application number: 12/638,349
- Filed: 2009-12-15
- Published: 2010-07-01
- Earliest claimed: 2008-12-25
- Assignees: National Institute of Advanced Ind. Sci & Tech; Nitto Denko Corporation
- Inventors: Kazuma Kurihara; Takashi Nakano; Takayuki Shima; Junji Tominaga; Kazuya Fujioka; Ichiro Suehiro
- Web page: https://patentgrep.com/patent/US20100167015A1

## CPC

- G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- G02B 3/0012: {characterised by the manufacturing method}
- Y10T 428/24479: including variation in thickness
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

An etching resist containing a metallic oxynitride. The etching resist of the present invention can be suitably used, for example, in the production of a molded article for surface-working an optical member such as a microlens sheet, a light diffusing sheet, a non-reflective sheet, a sheet for encapsulating photosemiconductor elements, an optical waveguide, an optical disk, or a photosensor.

## Claims

### Claim 1

An etching resist comprising a metallic oxynitride.

### Claim 2 (depends on 1)

The etching resist according to claim 1, wherein the metallic oxynitride comprises at least one element selected from the group consisting of Pt, Ag, Pd, and W as a main component.

### Claim 3 (depends on 1)

The etching resist according to claim 1, wherein the metallic oxynitride contains oxygen in an amount of 55 to 80 Atom %, and nitrogen in an amount of 5 to 30 Atom %.

### Claim 4 (depends on 1)

The etching resist according to claim 1, wherein the etching resist comprises a metallic oxynitride layer, and further comprises a first heat-generating layer and a second heat-generating layer, wherein the first heat-generating layer, the metallic oxynitride layer, and the second heat-generating layer are directly or indirectly laminated in this order.

### Claim 5 (depends on 4)

The etching resist according to claim 4, wherein each of the first heat-generating layer and the second heat-generating layer is made of an AgInSbTe alloy.

### Claim 6 (depends on 1)

A method for producing a molded article, comprising the steps of:
step A: laminating the etching resist as defined in claim 1 over a molding material;
step B: irradiating a laser beam over the etching resist laminated in the step A to form penetrating holes in the etching resist; and
step C: etching a surface of the molding material exposed in the penetrating holes formed in the step B.

### Claim 7 (depends on 6)

A molded article obtained by the method as defined in claim 6.