# US 2010/0166958 A1 · Fabrication method and fabrication apparatus for fabricating metal oxide thin film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0166958 A1 - Document ID: US20100166958A1 - Status: Published application - Kind: A1 - Application number: 12/600,665 - Filed: 2008-05-16 - Published: 2010-07-01 - Earliest claimed: 2007-05-22 - Assignees: National University Corporation Nagaoka University of Technology; Tokyo Electron Limited - Inventors: Kanji Yasui; Hiroshi Nishiyama; Masatoshi Tsukichi; Yasunori Inoue; Masasuke Takata - Web page: https://patentgrep.com/patent/US20100166958A1 ## CPC - C23C 16/40: Oxides - C01G 9/03: Processes of production using dry methods, e.g. vapour phase processes - C23C 16/407: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth} - C23C 16/448: characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/2921: {being crystalline insulating materials} - H10P 14/3426: {Oxides} - C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram - H10P 14/2901: {Materials} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS ## Abstract Object To provide a technique for efficiently forming a metal oxide thin film made of zinc oxide or the like on a substrate at a low cost, without requiring a large amount of electrical energy. Means of Solution H2 gas and O2 gas or, H2O2 gas, is introduced into a catalytic reactor to make contact with a catalyst to generate H2O gas, and the H2O gas is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit a metal oxide thin film on a substrate and fabricate the metal oxide thin film. ## Claims ### Claim 1 A fabrication method for fabricating a metal oxide thin film, comprising: introducing H2 gas and O2 gas or, H2O2 gas, into a catalytic reactor, to make contact with a catalyst to generate H2O gas; and jetting the H2O gas from the catalytic reactor to react with a metal compound gas, to thereby deposit a metal oxide thin film on a substrate. ### Claim 2 (depends on 1) The fabrication method as claimed in claim 1, wherein said introducing introduces H2 gas and O2 gas or, H2O2 gas, into a catalytic reactor that is arranged within a decompressible reaction chamber. ### Claim 3 (depends on 1) The fabrication method as claimed in claim 1, further comprising: depositing on a substrate a metal oxide that is generated by the reaction between the H2O gas and the metal compound gas. ### Claim 4 (depends on 1) The fabrication method for fabricating the metal oxide thin film as claimed in claim 1, wherein said introducing includes generating the H2O gas that is heated by heat of reaction, by contacting the H2 gas and O2 gas or, the H2O2 gas with the catalyst within the catalyst reactor. ### Claim 5 (depends on 1) The fabrication method for fabricating the metal oxide thin film as claimed in claim 1, wherein the catalyst includes a carrier in the form of microparticles having an average particle diameter of 0.05 mm to 2.0 mm, and a catalyst component in a form of ultra-microparticles, carried on the carrier and having an average particle diameter of 1 nm to 10 nm. ### Claim 6 (depends on 1) The fabrication method for fabricating the metal oxide thin film as claimed in claim 1, wherein the metal compound is an organic zinc compound, and a zinc oxide thin film is formed on the substrate. ### Claim 7 (depends on 6) The fabrication method for fabricating the metal oxide thin film as claimed in claim 6, wherein the organic zinc compound is dialkyl zinc, and the catalyst includes ceramic oxide in the form of microparticles carrying ultra-microparticles of platinum (Pt), ruthenium (Ru) or iridium (Ir). ### Claim 8 (depends on 6) The fabrication method for fabricating the metal oxide thin film as claimed in claim 6, wherein the organic zinc compound is dialkyl zinc, and the catalyst includes ceramic oxide in the form of microparticles carrying platinum ultra-microparticles. ### Claim 9 (depends on 6) The fabrication method for fabricating the metal oxide thin film as claimed in claim 6 wherein the organic zinc compound is dialkyl zinc, and the catalyst includes alumina in the form of microparticles carrying platinum ultra-microparticles. ### Claim 10 (depends on 1) The fabrication method for fabricating the metal oxide thin film as claimed in claim 1, further comprising: blocking excessive gas by closing a shutter, which is configured to open and closed and is provided between the catalytic reactor and the substrate, at an initial stage of the reaction. ### Claim 11 (depends on 1) The fabrication method for fabricating the metal oxide thin film as claimed in claim 1, wherein the substrate is made of a material selected from a group consisting of metals, metal oxides, glass, ceramics, semiconductors, and plastics. ### Claim 12 (depends on 1) The fabrication method for fabricating the metal oxide thin film as claimed in claim 1, further comprising: setting the substrate to a temperature in a range of room temperature to 1500° C. ### Claim 13 A fabrication apparatus for fabricating a metal oxide thin film, comprising: a catalytic reactor configured to include a catalyst arranged therein and generating H2O gas by making contact with H2 gas and O2 gas or, H2O2 gas, and jetting the H2O gas from the catalytic reactor; a metal compound gas supplying part configured to supply a metal compound gas to react with the generated H2O gas; and a substrate holder configured to support a substrate, wherein a chemical reaction is caused between the generated H2O gas and the metal compound gas, to thereby deposit a metal oxide thin film on the substrate. ### Claim 14 (depends on 13) The fabrication apparatus for fabricating the metal oxide thin film as claimed in claim 13, further comprising: a decompressible reaction chamber in which the metal oxide thin film is deposited on the substrate; wherein the substrate holder is arranged within the decompressible reaction chamber; the catalytic reactor is connected to the decompressible reaction chamber or, provided within the decompressible reaction chamber; and the metal compound gas supply part is connected to the decompressible reaction chamber. ### Claim 15 (depends on 13) The fabrication apparatus for fabricating the metal oxide thin film as claimed in claim 13 wherein the catalyst includes a carrier in the form of microparticles having an average particle diameter of 0.05 mm to 2.0 mm, and a catalyst component in a form of ultra-microparticles, carried on the carrier and having an average particle diameter of 1 nm to 10 nm. ### Claim 16 (depends on 13) The fabrication apparatus for fabricating the metal oxide thin film as claimed in claim 13, wherein the metal compound is an organic zinc compound, and a zinc oxide thin film is formed on the substrate. ### Claim 17 (depends on 16) The fabrication apparatus for fabricating the metal oxide thin film as claimed in claim 16, wherein the organic zinc compound is dialkyl zinc, and the catalyst includes ceramic oxide in the form of microparticles carrying ultra-microparticles of platinum (Pt), ruthenium (Ru) or iridium (Ir). ### Claim 18 (depends on 16) The fabrication apparatus for fabricating the metal oxide thin film as claimed in claim 16, wherein the organic zinc compound is dialkyl zinc, and the catalyst includes ceramic oxide in the form of microparticles carrying platinum ultra-microparticles. ### Claim 19 (depends on 16) The fabrication apparatus for fabricating the metal oxide thin film as claimed in claim 16, wherein the organic zinc compound is dialkyl zinc, and the catalyst includes alumina in the form of microparticles carrying platinum ultra-microparticles. ### Claim 20 (depends on 1) The fabrication method for fabricating the metal oxide thin film as claimed in claim 1, further comprising: setting the substrate to a temperature of 400° C. or lower.